Influence of the mass of primary ions on the formation of defects and clusters on the surface of Si crystals

Шаропов, У.Б, Атабаев, Б.Г., Джаббарганов, Р., Рахматов, А., Стельмах, В.Г., Мирзахмедов, И., Жабборов, Х.И.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

The effect of the mass of primary ions on the formation of defects and clusters on the surface of silicon crystals using the SIMS and TRIM methods is investigated. It is shown that the formed interstitial defects on the surface lead to the sputtering of cluster ions, and vacancies affect the threshold for the formation of lattice ions.

Maqola ma’lumotlari
MualliflarШаропов, У.Б, Атабаев, Б.Г., Джаббарганов, Р., Рахматов, А., Стельмах, В.Г., Мирзахмедов, И., Жабборов, Х.И.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2019-02-21
Jild21
Son1
Betlar40-43
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v21i1.48
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v21i1.48 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAШаропов, У.Б, Атабаев, Б.Г., Джаббарганов, Р., Рахматов, А., Стельмах, В.Г., Мирзахмедов, И., & Жабборов, Х.И. (2019). INFLUENCE OF THE MASS OF PRIMARY IONS ON THE FORMATION OF DEFECTS AND CLUSTERS ON THE SURFACE OF Si CRYSTALS. O‘zbekiston fizika jurnali, 21(1), 40-43. https://doi.org/10.52304/.v21i1.48
GOST (OAK)Шаропов, У.Б va b. INFLUENCE OF THE MASS OF PRIMARY IONS ON THE FORMATION OF DEFECTS AND CLUSTERS ON THE SURFACE OF Si CRYSTALS // O‘zbekiston fizika jurnali. – 2019. – T. 21, № 1. – P. 40-43. – DOI: 10.52304/.v21i1.48.
MLAШаропов, У.Б, Атабаев, Б.Г., Джаббарганов, Р., Рахматов, А., Стельмах, В.Г., Мирзахмедов, И., and Жабборов, Х.И. “INFLUENCE OF THE MASS OF PRIMARY IONS ON THE FORMATION OF DEFECTS AND CLUSTERS ON THE SURFACE OF Si CRYSTALS.” O‘zbekiston fizika jurnali, 21(1), 40-43, 2019. https://doi.org/10.52304/.v21i1.48
ChicagoШаропов, У.Б, Атабаев, Б.Г., Джаббарганов, Р., Рахматов, А., Стельмах, В.Г., Мирзахмедов, И., and Жабборов, Х.И. “INFLUENCE OF THE MASS OF PRIMARY IONS ON THE FORMATION OF DEFECTS AND CLUSTERS ON THE SURFACE OF Si CRYSTALS.” O‘zbekiston fizika jurnali, 21(1), 40-43 (2019). https://doi.org/10.52304/.v21i1.48
HarvardШаропов, У.Б, Атабаев, Б.Г., Джаббарганов, Р., Рахматов, А., Стельмах, В.Г., Мирзахмедов, И., and Жабборов, Х.И (2019) ‘INFLUENCE OF THE MASS OF PRIMARY IONS ON THE FORMATION OF DEFECTS AND CLUSTERS ON THE SURFACE OF Si CRYSTALS’, O‘zbekiston fizika jurnali, 21(1), 40-43. https://doi.org/10.52304/.v21i1.48
BibTeX
@article{article2019,
  title = {INFLUENCE OF THE MASS OF PRIMARY IONS ON THE FORMATION OF DEFECTS AND CLUSTERS ON THE SURFACE OF Si CRYSTALS},
  author = {Шаропов, У.Б and Атабаев, Б.Г. and Джаббарганов, Р. and Рахматов, А. and Стельмах, В.Г. and Мирзахмедов, И. and Жабборов, Х.И.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2019},
  volume = {21},
  number = {1},
  pages = {40-43},
  doi = {10.52304/.v21i1.48},
  url = {https://doi.org/10.52304/.v21i1.48}
}

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