The effect of the mass of primary ions on the formation of defects and clusters on the surface of silicon crystals using the SIMS and TRIM methods is investigated. It is shown that the formed interstitial defects on the surface lead to the sputtering of cluster ions, and vacancies affect the threshold for the formation of lattice ions.
| Mualliflar | Шаропов, У.Б, Атабаев, Б.Г., Джаббарганов, Р., Рахматов, А., Стельмах, В.Г., Мирзахмедов, И., Жабборов, Х.И. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-02-21 |
| Jild | 21 |
| Son | 1 |
| Betlar | 40-43 |
| Til | Rus |
| DOI | 10.52304/.v21i1.48 |
DOI: 10.52304/.v21i1.48 · Maqolaning asl sahifasi
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