Influence of lateral expansion of the gate on short-channel effects in a nanometer soi FinFET transistor

Абдикаримов, А.Э., Юсупов, А., Атамуратов, А.Э.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

Influence of gate lateral extension on the threshold voltage and short-channel effects in SOI FinFET with different shape are simulated by Advanced TCAD Sentaurus method. It is shown gate lateral extension practically is not influence to threshold voltage and DIBL and SS is decreased with increasing the extension. Lowest and highest DIBL and SS are observed for transistor with triangular and rectangular cross section correspondingly.

Maqola ma’lumotlari
MualliflarАбдикаримов, А.Э., Юсупов, А., Атамуратов, А.Э.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2019-02-21
Jild21
Son1
Betlar50-52
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v21i1.50
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v21i1.50 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAАбдикаримов, А.Э., Юсупов, А., & Атамуратов, А.Э. (2019). INFLUENCE OF LATERAL EXPANSION OF THE GATE ON SHORT-CHANNEL EFFECTS IN A NANOMETER SOI FinFET TRANSISTOR. O‘zbekiston fizika jurnali, 21(1), 50-52. https://doi.org/10.52304/.v21i1.50
GOST (OAK)Абдикаримов, А.Э., Юсупов, А., Атамуратов, А.Э. INFLUENCE OF LATERAL EXPANSION OF THE GATE ON SHORT-CHANNEL EFFECTS IN A NANOMETER SOI FinFET TRANSISTOR // O‘zbekiston fizika jurnali. – 2019. – T. 21, № 1. – P. 50-52. – DOI: 10.52304/.v21i1.50.
MLAАбдикаримов, А.Э., Юсупов, А., and Атамуратов, А.Э. “INFLUENCE OF LATERAL EXPANSION OF THE GATE ON SHORT-CHANNEL EFFECTS IN A NANOMETER SOI FinFET TRANSISTOR.” O‘zbekiston fizika jurnali, 21(1), 50-52, 2019. https://doi.org/10.52304/.v21i1.50
ChicagoАбдикаримов, А.Э., Юсупов, А., and Атамуратов, А.Э. “INFLUENCE OF LATERAL EXPANSION OF THE GATE ON SHORT-CHANNEL EFFECTS IN A NANOMETER SOI FinFET TRANSISTOR.” O‘zbekiston fizika jurnali, 21(1), 50-52 (2019). https://doi.org/10.52304/.v21i1.50
HarvardАбдикаримов, А.Э., Юсупов, А., and Атамуратов, А.Э (2019) ‘INFLUENCE OF LATERAL EXPANSION OF THE GATE ON SHORT-CHANNEL EFFECTS IN A NANOMETER SOI FinFET TRANSISTOR’, O‘zbekiston fizika jurnali, 21(1), 50-52. https://doi.org/10.52304/.v21i1.50
BibTeX
@article{article2019,
  title = {INFLUENCE OF LATERAL EXPANSION OF THE GATE ON SHORT-CHANNEL EFFECTS IN A NANOMETER SOI FinFET TRANSISTOR},
  author = {Абдикаримов, А.Э. and Юсупов, А. and Атамуратов, А.Э.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2019},
  volume = {21},
  number = {1},
  pages = {50-52},
  doi = {10.52304/.v21i1.50},
  url = {https://doi.org/10.52304/.v21i1.50}
}

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