Influence of gate lateral extension on the threshold voltage and short-channel effects in SOI FinFET with different shape are simulated by Advanced TCAD Sentaurus method. It is shown gate lateral extension practically is not influence to threshold voltage and DIBL and SS is decreased with increasing the extension. Lowest and highest DIBL and SS are observed for transistor with triangular and rectangular cross section correspondingly.
| Mualliflar | Абдикаримов, А.Э., Юсупов, А., Атамуратов, А.Э. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-02-21 |
| Jild | 21 |
| Son | 1 |
| Betlar | 50-52 |
| Til | Rus |
| DOI | 10.52304/.v21i1.50 |
DOI: 10.52304/.v21i1.50 · Maqolaning asl sahifasi
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