The technique for producing thin films of higher manganese silicide by magnetron sputtering is considered. The films were obtained on dielectric substrates: sitall СT-35-2 and mica. New results on the structural and transport properties of the films have been obtained.
| Mualliflar | Камилов, Т.С., Рысбаев, А.С., Камардин, А.И., Бурков, А.Т., Новиков, С.В., Клечковская, В.В., Орехов, А.С., Игамов, Б.Д., Бекпулатов, И.Р. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-06-21 |
| Jild | 21 |
| Son | 3 |
| Betlar | 153-157 |
| Til | Rus |
| DOI | 10.52304/.v21i3.74 |
DOI: 10.52304/.v21i3.74 · Maqolaning asl sahifasi
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