SIMULATION OF THE GROWTH PROCESS AND CONTROL OF THE FORMATION OF SILICON NANOPARTICLES IN A DUST PLASMA

Ашуров, Р.Х., Умирзаков, Б.Е., Оксенгендлер, Б.Л., Ротштейн, В.М., Ашуров, Х.Б.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

A physical model is proposed for the growth of silicon nanoparticles in the form  SiH+3 →SiH03  based on the Mott-Gurney scheme. The concept of the formation of silicon nanoparticles from monosilane was developed, taking into account charge exchange and growth arrest. Silicon nanoparticles were grown in dust plasma at various pressures of monosilane. It is shown that the dependence of the particle size on the pressure of monosilane confirms the validity of the proposed concept.

Maqola ma’lumotlari
MualliflarАшуров, Р.Х., Умирзаков, Б.Е., Оксенгендлер, Б.Л., Ротштейн, В.М., Ашуров, Х.Б.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2019-06-21
Jild21
Son3
Betlar133-138
TilRus
DOI10.52304/.v21i3.67

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