By computer simulation in the framework of molecular dynamics, it was found that the processes of deposition of non-hydrogenated and hydrogenated carbon atoms onto defect-free graphene depend on the hydrogenation degree of the carbon atom.
| Mualliflar | Сайфуллаева, Н.А., Жабборов, Х.И., Стельмах, В.Г., Ядгаров, И.Д. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-04-21 |
| Jild | 21 |
| Son | 2 |
| Betlar | 107-110 |
| Til | Rus |
| DOI | 10.52304/.v21i2.61 |
DOI: 10.52304/.v21i2.61 · Maqolaning asl sahifasi
The possibility of obtaining a tungsten-substituting Ti0.70Mo0.30C cubic alloy by high-temperature sintering (at 2500 K) of powders of TiC and MoC cubic carbides mixed in appropriate proportions has been considered. An…
The paper reports the formation of ZnO nanorods on the surface of a stainless steel mesh. The nanorods in cross section have a regular hexagonal shape. The length of nanorods is 2−15 microns, while a diameter varies…
The domain structure of thin single-crystal plate of the iron garnet Tb3Fe5O12 has been investigated using the magneto-optical method in the temperature range near the magnetic compensation point of this ferrimagnet Tс…
Correlation between spectrum of the low temperature (T = 4.2 K) photoluminescence and anomalous photovoltages properties of oblique sputtered polycrystalline thin films CdTe, CdTe:In is discovered. In spectrum of…
A frequency shift of Mandelshtam-Brillouin components in spectra of fine structure of Rayleigh light scattering was studied in aqueous solutions of 4-methylpyridine at various concentration and temperature. In the…
By the Кubo-Greenwood formula using the Davis-Mott approximation, the spectra of infra-red absorption in amorphous semiconductors are investigated. In is shown, that occurrence of bands of strong absorption in defect…
In this work, the diffusion evolution of small electromagnet perturbations in II-type superconductors, placed in a viscous flux flow state is investigated. Analytical formulas for depth and speed of penetration of a…
The transparency of coefficients of the asymmetric potential barriers of a semiconductor structure consisting of alternating potential barriers and potential wells are calculated. In this case, the difference between…
A physical model is proposed for the growth of silicon nanoparticles in the form SiH+3 →SiH03 based on the Mott-Gurney scheme. The concept of the formation of silicon nanoparticles from monosilane was…
Oscillations of longitudinal electrical conductivity in narrow-gap semiconductors are considered. A theory was constructed of the temperature dependence of the oscillations of the longitudinal electrical conductivity in…