INFRARED ABSORPTION SPECTRA IN AMORPHOUS SEMICONDUCTORS

Зайнобидинов, С., Икрамов, Р.Г., Нуриддинова, М.А., Жалолов, Р.М.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

By the Кubo-Greenwood formula using the Davis-Mott approximation, the spectra of infra-red absorption in amorphous semiconductors are investigated. In is shown, that occurrence of bands of strong absorption in defect states formed in a band of mobility gap is defined by the non-local electronic states being on edges of a valence band or conduction band. It is shown also that in infra-red spectra maxima are formed only when function of electron state’s density on a allowed band edge, near which the energy states of defects are located, has an maximum.

Maqola ma’lumotlari
MualliflarЗайнобидинов, С., Икрамов, Р.Г., Нуриддинова, М.А., Жалолов, Р.М.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2019-04-21
Jild21
Son2
Betlar88-92
TilRus
DOI10.52304/.v21i2.58

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