By the Кubo-Greenwood formula using the Davis-Mott approximation, the spectra of infra-red absorption in amorphous semiconductors are investigated. In is shown, that occurrence of bands of strong absorption in defect states formed in a band of mobility gap is defined by the non-local electronic states being on edges of a valence band or conduction band. It is shown also that in infra-red spectra maxima are formed only when function of electron state’s density on a allowed band edge, near which the energy states of defects are located, has an maximum.
| Mualliflar | Зайнобидинов, С., Икрамов, Р.Г., Нуриддинова, М.А., Жалолов, Р.М. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-04-21 |
| Jild | 21 |
| Son | 2 |
| Betlar | 88-92 |
| Til | Rus |
| DOI | 10.52304/.v21i2.58 |
DOI: 10.52304/.v21i2.58 · Maqolaning asl sahifasi
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