Electronic properties of a semiconductor multilayer structure

Расулов, В.Р., Расулов, Р.Я., Мамадалиева, Н.З., Эшболтаев, И.М.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

The transparency of coefficients of the asymmetric potential barriers of a semiconductor structure consisting of alternating potential barriers and potential wells are calculated. In this case, the difference between the effective electron masses and the height of the potenial barriers has taken into account. It is shown that in asymmetric semiconductor structure, the oscillation of the electron energy should exhibit in the dependence of the transmission coefficient through the potential barrier.

Maqola ma’lumotlari
MualliflarРасулов, В.Р., Расулов, Р.Я., Мамадалиева, Н.З., Эшболтаев, И.М.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2019-04-21
Jild21
Son2
Betlar77-87
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v21i2.57
Indeksga qo‘shilgan2026-08-26

Ilmiy soha

Iqtibos keltirish

APAРасулов, В.Р., Расулов, Р.Я., Мамадалиева, Н.З., & Эшболтаев, И.М. (2019). ELECTRONIC PROPERTIES OF A SEMICONDUCTOR MULTILAYER STRUCTURE. O‘zbekiston fizika jurnali, 21(2), 77-87. https://doi.org/10.52304/.v21i2.57
GOST (OAK)Расулов, В.Р. va b. ELECTRONIC PROPERTIES OF A SEMICONDUCTOR MULTILAYER STRUCTURE // O‘zbekiston fizika jurnali. – 2019. – T. 21, № 2. – P. 77-87. – DOI: 10.52304/.v21i2.57.
MLAРасулов, В.Р., Расулов, Р.Я., Мамадалиева, Н.З., and Эшболтаев, И.М. “ELECTRONIC PROPERTIES OF A SEMICONDUCTOR MULTILAYER STRUCTURE.” O‘zbekiston fizika jurnali, 21(2), 77-87, 2019. https://doi.org/10.52304/.v21i2.57
ChicagoРасулов, В.Р., Расулов, Р.Я., Мамадалиева, Н.З., and Эшболтаев, И.М. “ELECTRONIC PROPERTIES OF A SEMICONDUCTOR MULTILAYER STRUCTURE.” O‘zbekiston fizika jurnali, 21(2), 77-87 (2019). https://doi.org/10.52304/.v21i2.57
HarvardРасулов, В.Р., Расулов, Р.Я., Мамадалиева, Н.З., and Эшболтаев, И.М (2019) ‘ELECTRONIC PROPERTIES OF A SEMICONDUCTOR MULTILAYER STRUCTURE’, O‘zbekiston fizika jurnali, 21(2), 77-87. https://doi.org/10.52304/.v21i2.57
BibTeX
@article{article2019,
  title = {ELECTRONIC PROPERTIES OF A SEMICONDUCTOR MULTILAYER STRUCTURE},
  author = {Расулов, В.Р. and Расулов, Р.Я. and Мамадалиева, Н.З. and Эшболтаев, И.М.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2019},
  volume = {21},
  number = {2},
  pages = {77-87},
  doi = {10.52304/.v21i2.57},
  url = {https://doi.org/10.52304/.v21i2.57}
}

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