ELECTRONIC PROPERTIES OF A SEMICONDUCTOR MULTILAYER STRUCTURE

Расулов, В.Р., Расулов, Р.Я., Мамадалиева, Н.З., Эшболтаев, И.М.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

The transparency of coefficients of the asymmetric potential barriers of a semiconductor structure consisting of alternating potential barriers and potential wells are calculated. In this case, the difference between the effective electron masses and the height of the potenial barriers has taken into account. It is shown that in asymmetric semiconductor structure, the oscillation of the electron energy should exhibit in the dependence of the transmission coefficient through the potential barrier.

Maqola ma’lumotlari
MualliflarРасулов, В.Р., Расулов, Р.Я., Мамадалиева, Н.З., Эшболтаев, И.М.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2019-04-21
Jild21
Son2
Betlar77-87
TilRus
DOI10.52304/.v21i2.57

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