The photosensitive sandwich-structured Au-vGaAs:O-nCdS-nInP-Au semiconductor formed by vacuum deposition of thin films of cadmium sulfide and indium phosphide on a single-crystal substrate of gallium arsenide has been studied. It was experimentally shown that the structures are characterized by photosensitivity in a wide spectral range (0.5−1.7 microns) with maximum photosensitivity in the impurity spectral region (1.2 and 1.55 microns) at room temperature. In this case, the dependence of the spectral photocurrent on the operating voltage acquires a superlinear character, which is due to the presence of the amplification effect of the primary photocurrent.
| Mualliflar | Ёдгорова, Д.М., Гиясова, Ф.А., Кулиев, Ш.М., Якубов, А.А., Муродуллаева, Г., Шертоев, Ж.Х. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2019-06-21 |
| Jild | 21 |
| Son | 3 |
| Betlar | 139-146 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v21i3.68 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v21i3.68 · Maqolaning asl sahifasi
| APA | Ёдгорова, Д.М., Гиясова, Ф.А., Кулиев, Ш.М., Якубов, А.А., Муродуллаева, Г., & Шертоев, Ж.Х. (2019). Photosensitive MULTILAYER SEMICONDUCTOR Au-νGaAs:O-nCdS-nInP-Au-STRUCTURES WITH FILM HETEROLAYERS. O‘zbekiston fizika jurnali, 21(3), 139-146. https://doi.org/10.52304/.v21i3.68 |
|---|---|
| GOST (OAK) | Ёдгорова, Д.М. va b. Photosensitive MULTILAYER SEMICONDUCTOR Au-νGaAs:O-nCdS-nInP-Au-STRUCTURES WITH FILM HETEROLAYERS // O‘zbekiston fizika jurnali. – 2019. – T. 21, № 3. – P. 139-146. – DOI: 10.52304/.v21i3.68. |
| MLA | Ёдгорова, Д.М., Гиясова, Ф.А., Кулиев, Ш.М., Якубов, А.А., Муродуллаева, Г., and Шертоев, Ж.Х. “Photosensitive MULTILAYER SEMICONDUCTOR Au-νGaAs:O-nCdS-nInP-Au-STRUCTURES WITH FILM HETEROLAYERS.” O‘zbekiston fizika jurnali, 21(3), 139-146, 2019. https://doi.org/10.52304/.v21i3.68 |
| Chicago | Ёдгорова, Д.М., Гиясова, Ф.А., Кулиев, Ш.М., Якубов, А.А., Муродуллаева, Г., and Шертоев, Ж.Х. “Photosensitive MULTILAYER SEMICONDUCTOR Au-νGaAs:O-nCdS-nInP-Au-STRUCTURES WITH FILM HETEROLAYERS.” O‘zbekiston fizika jurnali, 21(3), 139-146 (2019). https://doi.org/10.52304/.v21i3.68 |
| Harvard | Ёдгорова, Д.М., Гиясова, Ф.А., Кулиев, Ш.М., Якубов, А.А., Муродуллаева, Г., and Шертоев, Ж.Х (2019) ‘Photosensitive MULTILAYER SEMICONDUCTOR Au-νGaAs:O-nCdS-nInP-Au-STRUCTURES WITH FILM HETEROLAYERS’, O‘zbekiston fizika jurnali, 21(3), 139-146. https://doi.org/10.52304/.v21i3.68 |
| BibTeX | @article{article2019,
title = {Photosensitive MULTILAYER SEMICONDUCTOR Au-νGaAs:O-nCdS-nInP-Au-STRUCTURES WITH FILM HETEROLAYERS},
author = {Ёдгорова, Д.М. and Гиясова, Ф.А. and Кулиев, Ш.М. and Якубов, А.А. and Муродуллаева, Г. and Шертоев, Ж.Х.},
journal = {O‘zbekiston fizika jurnali},
year = {2019},
volume = {21},
number = {3},
pages = {139-146},
doi = {10.52304/.v21i3.68},
url = {https://doi.org/10.52304/.v21i3.68}
} |
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