Photosensitive MULTILAYER SEMICONDUCTOR Au-νGaAs:O-nCdS-nInP-Au-STRUCTURES WITH FILM HETEROLAYERS

Ёдгорова, Д.М., Гиясова, Ф.А., Кулиев, Ш.М., Якубов, А.А., Муродуллаева, Г., Шертоев, Ж.Х.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

The photosensitive sandwich-structured Au-vGaAs:O-nCdS-nInP-Au semiconductor formed by vacuum deposition of thin films of cadmium sulfide and indium phosphide on a single-crystal substrate of gallium arsenide has been studied. It was experimentally shown that the structures are characterized by photosensitivity in a wide spectral range (0.5−1.7 microns) with maximum photosensitivity in the impurity spectral region (1.2 and 1.55 microns) at room temperature. In this case, the dependence of the spectral photocurrent on the operating voltage acquires a superlinear character, which is due to the presence of the amplification effect of the primary photocurrent.

Maqola ma’lumotlari
MualliflarЁдгорова, Д.М., Гиясова, Ф.А., Кулиев, Ш.М., Якубов, А.А., Муродуллаева, Г., Шертоев, Ж.Х.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2019-06-21
Jild21
Son3
Betlar139-146
TilRus
DOI10.52304/.v21i3.68

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