The photosensitive sandwich-structured Au-vGaAs:O-nCdS-nInP-Au semiconductor formed by vacuum deposition of thin films of cadmium sulfide and indium phosphide on a single-crystal substrate of gallium arsenide has been studied. It was experimentally shown that the structures are characterized by photosensitivity in a wide spectral range (0.5−1.7 microns) with maximum photosensitivity in the impurity spectral region (1.2 and 1.55 microns) at room temperature. In this case, the dependence of the spectral photocurrent on the operating voltage acquires a superlinear character, which is due to the presence of the amplification effect of the primary photocurrent.
| Mualliflar | Ёдгорова, Д.М., Гиясова, Ф.А., Кулиев, Ш.М., Якубов, А.А., Муродуллаева, Г., Шертоев, Ж.Х. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-06-21 |
| Jild | 21 |
| Son | 3 |
| Betlar | 139-146 |
| Til | Rus |
| DOI | 10.52304/.v21i3.68 |
DOI: 10.52304/.v21i3.68 · Maqolaning asl sahifasi
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