NEW PHOTOMAGNETIC SEMICONDUCTOR MATERIAL

Мавлонов, Г.Х., Шергозиев, Ш.Б.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

It has been found that silicon with magnetic nanoclusters is basis for new photomagnetic material possessing high sensitivity both to background and to IR-light. In enough narrow interval of background illumination intensity I = 1−100 Lk, the magnetoresistance value can change by more than 100 times at 300 K. The obtained results allow one to design new photomagnetic devices and are a basis of development of new scientific directions as photo- and IR-spintronics.

Maqola ma’lumotlari
MualliflarМавлонов, Г.Х., Шергозиев, Ш.Б.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2019-06-21
Jild21
Son3
Betlar147-152
TilRus
DOI10.52304/.v21i3.70

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