It has been found that silicon with magnetic nanoclusters is basis for new photomagnetic material possessing high sensitivity both to background and to IR-light. In enough narrow interval of background illumination intensity I = 1−100 Lk, the magnetoresistance value can change by more than 100 times at 300 K. The obtained results allow one to design new photomagnetic devices and are a basis of development of new scientific directions as photo- and IR-spintronics.
| Mualliflar | Мавлонов, Г.Х., Шергозиев, Ш.Б. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-06-21 |
| Jild | 21 |
| Son | 3 |
| Betlar | 147-152 |
| Til | Rus |
| DOI | 10.52304/.v21i3.70 |
DOI: 10.52304/.v21i3.70 · Maqolaning asl sahifasi
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