High-quality crystalline films of Sb2(SxSe1-x)3 were obtained by vacuum thermal evaporation method from powders of the binary compounds Sb2S3 and Sb2Se3 at a substrate temperature of 300°C. The influence of the atomic composition S/(S+Se) of the synthesized films on the optical and electrical properties of Sb2(SxSe1-x)3 was investigated. The bandgap of the solid solution films increases with the sulfur concentration in the deposited films. The electrical conductivity of the films varies within the range of 1.1×10−4 to 3.2×10−4 (Ω·cm)−1 depending on the atomic concentration ratio S/(S+Se). The results obtained are key factors for the development of efficient solar devices based on Sb2(SxSe1-x)3 using the vacuum deposition method from powders of the binary compounds Sb2S3 and Sb2Se3.
| Mualliflar | Разиков, T.M., Кучкаров, K.M., Тиванов, M.C., Олимов, А.Н., Исаков, Д.З., Махмудов, М.А., Пиримметов, M., Байко, Д.С., Ляшенко, Л.С., Насиров, А. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2024-04-08 |
| Jild | 26 |
| Son | 1 |
| Til | Rus |
| DOI | 10.52304/.v26i1.498 |
DOI: 10.52304/.v26i1.498 · Maqolaning asl sahifasi
Sb2Se3, Sb2S3, Sb2(SxSe1-x)3, твердый раствор, ширина запрещенной зоны, коэффициент поглощения, электропроводность, энергия Урбаха, Sb2Se3, Sb2S3, Sb2(SxSe1-x)3, solid solution, bandgap, absorption coefficient, electrical conductivity, Urbach energy
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