THEORETICAL EXPLANATION OF THE EFFECT OF REDUCTION PLASMON ENERGIES IN Si (111) DURING ION IMPLANTATION WITH A LARGE DOSE

Хужаниязов, Ж.Б., Рысбаев, А.С., Бекпулатов, И.Р., Файзуллаев, Р.Ф.

O‘zbekiston fizika jurnali · 2018-yil

Annotatsiya

A theoretical explanation of decreasing energy excitation of surface and volume plasma oscillations of valence electrons in silicon Si (111) at implantation of ions B, Ва and alkaline elements with large dose D>1016 cm−2 found out experimentally has been given. Observable effect of decreasing plasmon energy in Si(111) has been explained by strong attenuation of valence electron’s oscillations owing to strong disordering crystal structure Si(111) up to full amorphization.

Maqola ma’lumotlari
MualliflarХужаниязов, Ж.Б., Рысбаев, А.С., Бекпулатов, И.Р., Файзуллаев, Р.Ф.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2018-01-21
Jild20
Son1
Betlar43-50
TilRus
DOI10.52304/.v20i1.26

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