A theoretical explanation of decreasing energy excitation of surface and volume plasma oscillations of valence electrons in silicon Si (111) at implantation of ions B, Ва and alkaline elements with large dose D>1016 cm−2 found out experimentally has been given. Observable effect of decreasing plasmon energy in Si(111) has been explained by strong attenuation of valence electron’s oscillations owing to strong disordering crystal structure Si(111) up to full amorphization.
| Mualliflar | Хужаниязов, Ж.Б., Рысбаев, А.С., Бекпулатов, И.Р., Файзуллаев, Р.Ф. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2018-01-21 |
| Jild | 20 |
| Son | 1 |
| Betlar | 43-50 |
| Til | Rus |
| DOI | 10.52304/.v20i1.26 |
DOI: 10.52304/.v20i1.26 · Maqolaning asl sahifasi
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