A theoretical explanation of decreasing energy excitation of surface and volume plasma oscillations of valence electrons in silicon Si (111) at implantation of ions B, Ва and alkaline elements with large dose D>1016 cm−2 found out experimentally has been given. Observable effect of decreasing plasmon energy in Si(111) has been explained by strong attenuation of valence electron’s oscillations owing to strong disordering crystal structure Si(111) up to full amorphization.
| Mualliflar | Хужаниязов, Ж.Б., Рысбаев, А.С., Бекпулатов, И.Р., Файзуллаев, Р.Ф. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2018-01-21 |
| Jild | 20 |
| Son | 1 |
| Betlar | 43-50 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v20i1.26 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v20i1.26 · Maqolaning asl sahifasi
| APA | Хужаниязов, Ж.Б., Рысбаев, А.С., Бекпулатов, И.Р., & Файзуллаев, Р.Ф. (2018). THEORETICAL EXPLANATION OF THE EFFECT OF REDUCTION PLASMON ENERGIES IN Si (111) DURING ION IMPLANTATION WITH A LARGE DOSE. O‘zbekiston fizika jurnali, 20(1), 43-50. https://doi.org/10.52304/.v20i1.26 |
|---|---|
| GOST (OAK) | Хужаниязов, Ж.Б. va b. THEORETICAL EXPLANATION OF THE EFFECT OF REDUCTION PLASMON ENERGIES IN Si (111) DURING ION IMPLANTATION WITH A LARGE DOSE // O‘zbekiston fizika jurnali. – 2018. – T. 20, № 1. – P. 43-50. – DOI: 10.52304/.v20i1.26. |
| MLA | Хужаниязов, Ж.Б., Рысбаев, А.С., Бекпулатов, И.Р., and Файзуллаев, Р.Ф. “THEORETICAL EXPLANATION OF THE EFFECT OF REDUCTION PLASMON ENERGIES IN Si (111) DURING ION IMPLANTATION WITH A LARGE DOSE.” O‘zbekiston fizika jurnali, 20(1), 43-50, 2018. https://doi.org/10.52304/.v20i1.26 |
| Chicago | Хужаниязов, Ж.Б., Рысбаев, А.С., Бекпулатов, И.Р., and Файзуллаев, Р.Ф. “THEORETICAL EXPLANATION OF THE EFFECT OF REDUCTION PLASMON ENERGIES IN Si (111) DURING ION IMPLANTATION WITH A LARGE DOSE.” O‘zbekiston fizika jurnali, 20(1), 43-50 (2018). https://doi.org/10.52304/.v20i1.26 |
| Harvard | Хужаниязов, Ж.Б., Рысбаев, А.С., Бекпулатов, И.Р., and Файзуллаев, Р.Ф (2018) ‘THEORETICAL EXPLANATION OF THE EFFECT OF REDUCTION PLASMON ENERGIES IN Si (111) DURING ION IMPLANTATION WITH A LARGE DOSE’, O‘zbekiston fizika jurnali, 20(1), 43-50. https://doi.org/10.52304/.v20i1.26 |
| BibTeX | @article{article2018,
title = {THEORETICAL EXPLANATION OF THE EFFECT OF REDUCTION PLASMON ENERGIES IN Si (111) DURING ION IMPLANTATION WITH A LARGE DOSE},
author = {Хужаниязов, Ж.Б. and Рысбаев, А.С. and Бекпулатов, И.Р. and Файзуллаев, Р.Ф.},
journal = {O‘zbekiston fizika jurnali},
year = {2018},
volume = {20},
number = {1},
pages = {43-50},
doi = {10.52304/.v20i1.26},
url = {https://doi.org/10.52304/.v20i1.26}
} |
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