The temperature dependence of the energy gaps in semiconductors is considered. In the approximation of the effective mass method, a change in the width of the forbidden band due to the interaction of electrons with lattice vibrations and thermal expansion of the crystal is determined. The results of the theory are compared with the experimental results. It is shown that in order to explain the dependence of the forbidden band width, it is necessary to take into account the contribution of the thermal broadening of the energy levels. It is established that the total change in the width of the forbidden band is determined both by the interaction of electrons with the lattice vibrations and by the thermal broadening of the energy levels in the allowed bands.
| Mualliflar | Гулямов, Г., Гулямов, А.Г., Шарибаев, Н.Ю., Эркабоев, У.И. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2018-01-21 |
| Jild | 20 |
| Son | 1 |
| Betlar | 9-17 |
| Til | Rus |
| DOI | 10.52304/.v20i1.21 |
DOI: 10.52304/.v20i1.21 · Maqolaning asl sahifasi
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