Dynamic strain conductivity and physical mechanisms of its manifestation under impulse pressure effects in samples Si <Mn> and Si <Zn> are studied in accordance with the degree of their compensation and the type of conductivity in the range of pressures P = 0−5×108 Pa and temperatures Т = 273−300 K. The ionization energy of the Mn and Zn levels and their baric coefficients were determined as ЕMn = Ес−0.52 eV, αMn = 1.81×10−11 eV/Pа, ЕZn = Ес−0.54 eV, αZn = 1.4×10−11 eV/Pа, respectively.
| Mualliflar | Зайнабидинов, С., Химматкулов, О., Турсунов, И.Г. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2018-01-21 |
| Jild | 20 |
| Son | 1 |
| Betlar | 32-36 |
| Til | Rus |
| DOI | 10.52304/.v20i1.24 |
DOI: 10.52304/.v20i1.24 · Maqolaning asl sahifasi
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