Physical mechanisms of dynamic conductivity in compensated samples Si and Si

Зайнабидинов, С., Химматкулов, О., Турсунов, И.Г.

O‘zbekiston fizika jurnali · 2018-yil

Annotatsiya

Dynamic strain conductivity and physical mechanisms of its manifestation under impulse pressure effects in samples Si <Mn> and Si <Zn> are studied in accordance with the degree of their compensation and the type of conductivity in the range of pressures P = 0−5×108 Pa and temperatures Т = 273−300 K. The ionization energy of the Mn and Zn levels and their baric coefficients were determined as ЕMn = Ес−0.52 eV, αMn = 1.81×10−11 eV/Pа, ЕZn = Ес−0.54 eV, αZn = 1.4×10−11 eV/Pа, respectively.

Maqola ma’lumotlari
MualliflarЗайнабидинов, С., Химматкулов, О., Турсунов, И.Г.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2018-01-21
Jild20
Son1
Betlar32-36
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v20i1.24
Indeksga qo‘shilgan2026-08-26

Ilmiy soha

Iqtibos keltirish

APAЗайнабидинов, С., Химматкулов, О., & Турсунов, И.Г. (2018). PHYSICAL MECHANISMS OF DYNAMIC CONDUCTIVITY IN COMPENSATED SAMPLES Si AND Si. O‘zbekiston fizika jurnali, 20(1), 32-36. https://doi.org/10.52304/.v20i1.24
GOST (OAK)Зайнабидинов, С., Химматкулов, О., Турсунов, И.Г. PHYSICAL MECHANISMS OF DYNAMIC CONDUCTIVITY IN COMPENSATED SAMPLES Si AND Si // O‘zbekiston fizika jurnali. – 2018. – T. 20, № 1. – P. 32-36. – DOI: 10.52304/.v20i1.24.
MLAЗайнабидинов, С., Химматкулов, О., and Турсунов, И.Г. “PHYSICAL MECHANISMS OF DYNAMIC CONDUCTIVITY IN COMPENSATED SAMPLES Si AND Si.” O‘zbekiston fizika jurnali, 20(1), 32-36, 2018. https://doi.org/10.52304/.v20i1.24
ChicagoЗайнабидинов, С., Химматкулов, О., and Турсунов, И.Г. “PHYSICAL MECHANISMS OF DYNAMIC CONDUCTIVITY IN COMPENSATED SAMPLES Si AND Si.” O‘zbekiston fizika jurnali, 20(1), 32-36 (2018). https://doi.org/10.52304/.v20i1.24
HarvardЗайнабидинов, С., Химматкулов, О., and Турсунов, И.Г (2018) ‘PHYSICAL MECHANISMS OF DYNAMIC CONDUCTIVITY IN COMPENSATED SAMPLES Si AND Si’, O‘zbekiston fizika jurnali, 20(1), 32-36. https://doi.org/10.52304/.v20i1.24
BibTeX
@article{article2018,
  title = {PHYSICAL MECHANISMS OF DYNAMIC CONDUCTIVITY IN COMPENSATED SAMPLES Si AND Si},
  author = {Зайнабидинов, С. and Химматкулов, О. and Турсунов, И.Г.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2018},
  volume = {20},
  number = {1},
  pages = {32-36},
  doi = {10.52304/.v20i1.24},
  url = {https://doi.org/10.52304/.v20i1.24}
}

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