The influence of ytterbium atoms on the electrophysical properties of silicon MIS-structures is investigated by means of CC-DLTS and high-frequency volt-farad characteristics. It is shown that the presence of ytterbium atoms in the volume of the silicon substrate leads to a decrease in the density of surface states of MIS-structures. It is found that the presence of Yb atoms in the substrate does not lead to noticeable changes in the density distribution of surface states Nss over the width of the band gap Eg.
| Mualliflar | Далиев, Ш.Х., Бекмуратов, М.Б. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-10-21 |
| Jild | 21 |
| Son | 5 |
| Betlar | 329-331 |
| Til | Rus |
| DOI | 10.52304/.v21i5.138 |
DOI: 10.52304/.v21i5.138 · Maqolaning asl sahifasi
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