The processes of low-temperature annealing of deep levels in silicon doped with cobalt atoms are investigated by means of deep level transient spectroscopy. It is shown that in n-Si<Co> during heat treatment at 300°C concentrations of all levels are significantly reduced. Annealing activation energies for all observed levels in n-Si<Co> were determined.
| Mualliflar | Утамурадова, Ш.Б., Олимбеков, З.О. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2019-10-21 |
| Jild | 21 |
| Son | 5 |
| Betlar | 332-334 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v21i5.139 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v21i5.139 · Maqolaning asl sahifasi
| APA | Утамурадова, Ш.Б., & Олимбеков, З.О. (2019). DEFECT FORMATION AT LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH COBALT. O‘zbekiston fizika jurnali, 21(5), 332-334. https://doi.org/10.52304/.v21i5.139 |
|---|---|
| GOST (OAK) | Утамурадова, Ш.Б., Олимбеков, З.О. DEFECT FORMATION AT LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH COBALT // O‘zbekiston fizika jurnali. – 2019. – T. 21, № 5. – P. 332-334. – DOI: 10.52304/.v21i5.139. |
| MLA | Утамурадова, Ш.Б., and Олимбеков, З.О. “DEFECT FORMATION AT LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH COBALT.” O‘zbekiston fizika jurnali, 21(5), 332-334, 2019. https://doi.org/10.52304/.v21i5.139 |
| Chicago | Утамурадова, Ш.Б., and Олимбеков, З.О. “DEFECT FORMATION AT LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH COBALT.” O‘zbekiston fizika jurnali, 21(5), 332-334 (2019). https://doi.org/10.52304/.v21i5.139 |
| Harvard | Утамурадова, Ш.Б., and Олимбеков, З.О (2019) ‘DEFECT FORMATION AT LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH COBALT’, O‘zbekiston fizika jurnali, 21(5), 332-334. https://doi.org/10.52304/.v21i5.139 |
| BibTeX | @article{article2019,
title = {DEFECT FORMATION AT LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH COBALT},
author = {Утамурадова, Ш.Б. and Олимбеков, З.О.},
journal = {O‘zbekiston fizika jurnali},
year = {2019},
volume = {21},
number = {5},
pages = {332-334},
doi = {10.52304/.v21i5.139},
url = {https://doi.org/10.52304/.v21i5.139}
} |
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