The processes of low-temperature annealing of deep levels in silicon doped with cobalt atoms are investigated by means of deep level transient spectroscopy. It is shown that in n-Si<Co> during heat treatment at 300°C concentrations of all levels are significantly reduced. Annealing activation energies for all observed levels in n-Si<Co> were determined.
| Mualliflar | Утамурадова, Ш.Б., Олимбеков, З.О. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-10-21 |
| Jild | 21 |
| Son | 5 |
| Betlar | 332-334 |
| Til | Rus |
| DOI | 10.52304/.v21i5.139 |
DOI: 10.52304/.v21i5.139 · Maqolaning asl sahifasi
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