DEFECT FORMATION AT LOW-TEMPERATURE ANNEALING OF SILICON DOPED WITH COBALT

Утамурадова, Ш.Б., Олимбеков, З.О.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

The processes of low-temperature annealing of deep levels in silicon doped with cobalt atoms are investigated by means of deep level transient spectroscopy. It is shown that in n-Si<Co> during heat treatment at 300°C concentrations of all levels are significantly reduced. Annealing activation energies for all observed levels in n-Si<Co> were determined.

Maqola ma’lumotlari
MualliflarУтамурадова, Ш.Б., Олимбеков, З.О.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2019-10-21
Jild21
Son5
Betlar332-334
TilRus
DOI10.52304/.v21i5.139

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