STUDIES OF THE DEFECTIVE SURFACE OF InP (001) BY THE METHOD OF LOW-ANGLE ION SCATTERING

Тураeв, Н.Ю., Каримов, М.К., Курбанов, М.К., Отабоев, М.У., Кутлиев, У.О.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

In this work the energy distributions of Ar+ ions scattering by the surface InP(001) in low indexing directions at the grazing incidence of bombarding ions are presents. In energy distributions the peaks which corresponding to the ions scattered from semichannel, surface atomic chains and defects are observed. Our results are interesting at the study of structure semiconductor surfaces.

Maqola ma’lumotlari
MualliflarТураeв, Н.Ю., Каримов, М.К., Курбанов, М.К., Отабоев, М.У., Кутлиев, У.О.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2019-10-21
Jild21
Son5
Betlar299-302
TilRus
DOI10.52304/.v21i5.133

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