In the paper, the effect of disordering of the surface layers on the electronic and optical properties of single-crystal silicon has been studied. An analysis of the photoelectron spectra shows that with complete amorphization of Si surface the state density of valence electrons has been significantly changed. In particular, the position of main maximum of the valence band electrons of Si(111) has been shifted by ~0.4 eV towards the higher binding energies, and the band gap Еg increases by 0.1−0.15 eV. The theoretical substantiation of the experimental results obtained is given.The effects of the disordering of the surface layers on the optical properties were also studied.
| Mualliflar | Умирзаков, Б.Е., Эргашов, Ё.С. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2019-10-21 |
| Jild | 21 |
| Son | 5 |
| Betlar | 293-298 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v21i5.132 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v21i5.132 · Maqolaning asl sahifasi
| APA | Умирзаков, Б.Е., & Эргашов, Ё.С. (2019). EXPERIMENTAL AND THEORETICAL STUDY OF THE INFLUENCE OF AR+ ION BOMBING ON THE VALENCE ELECTRON SPECTRUM OF SI (111) MONOCRYSTAL. O‘zbekiston fizika jurnali, 21(5), 293-298. https://doi.org/10.52304/.v21i5.132 |
|---|---|
| GOST (OAK) | Умирзаков, Б.Е., Эргашов, Ё.С. EXPERIMENTAL AND THEORETICAL STUDY OF THE INFLUENCE OF AR+ ION BOMBING ON THE VALENCE ELECTRON SPECTRUM OF SI (111) MONOCRYSTAL // O‘zbekiston fizika jurnali. – 2019. – T. 21, № 5. – P. 293-298. – DOI: 10.52304/.v21i5.132. |
| MLA | Умирзаков, Б.Е., and Эргашов, Ё.С. “EXPERIMENTAL AND THEORETICAL STUDY OF THE INFLUENCE OF AR+ ION BOMBING ON THE VALENCE ELECTRON SPECTRUM OF SI (111) MONOCRYSTAL.” O‘zbekiston fizika jurnali, 21(5), 293-298, 2019. https://doi.org/10.52304/.v21i5.132 |
| Chicago | Умирзаков, Б.Е., and Эргашов, Ё.С. “EXPERIMENTAL AND THEORETICAL STUDY OF THE INFLUENCE OF AR+ ION BOMBING ON THE VALENCE ELECTRON SPECTRUM OF SI (111) MONOCRYSTAL.” O‘zbekiston fizika jurnali, 21(5), 293-298 (2019). https://doi.org/10.52304/.v21i5.132 |
| Harvard | Умирзаков, Б.Е., and Эргашов, Ё.С (2019) ‘EXPERIMENTAL AND THEORETICAL STUDY OF THE INFLUENCE OF AR+ ION BOMBING ON THE VALENCE ELECTRON SPECTRUM OF SI (111) MONOCRYSTAL’, O‘zbekiston fizika jurnali, 21(5), 293-298. https://doi.org/10.52304/.v21i5.132 |
| BibTeX | @article{article2019,
title = {EXPERIMENTAL AND THEORETICAL STUDY OF THE INFLUENCE OF AR+ ION BOMBING ON THE VALENCE ELECTRON SPECTRUM OF SI (111) MONOCRYSTAL},
author = {Умирзаков, Б.Е. and Эргашов, Ё.С.},
journal = {O‘zbekiston fizika jurnali},
year = {2019},
volume = {21},
number = {5},
pages = {293-298},
doi = {10.52304/.v21i5.132},
url = {https://doi.org/10.52304/.v21i5.132}
} |
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