Mazkur maqolada yorug‘lik nurlovchi diodlarni ishlab chiqarishda qo‘llaniladigan asosiy texnologiyalar tahlil qilinadi. AIII–VV turdagi yarimo‘tkazgich birikmalari asosida epitaksial qatlamlar o‘stirishning gaz fazali va suyuq fazali usullari, ularning fizik-kimyoviy jarayonlari hamda texnologik afzalliklari ko‘rib chiqiladi. Shuningdek, legirlash, ko‘p qatlamli tuzilmalar hosil qilish, dislokatsiya zichligini kamaytirish va nurlanish samaradorligini oshirish imkoniyatlari tahlil qilinadi. Tadqiqot natijalari optoelektron qurilmalar, ayniqsa, yorug‘lik nurlovchi diodlar ishlab chiqarishda samarali texnologik yechimlarni tanlashga xizmat qiladi.
| Mualliflar | komilov, abdullajon |
|---|---|
| Jurnal | Al-Farg'oniy avlodlari |
| Nashr sanasi | 2026-02-20 |
| Son | 1 |
| Betlar | 45-48 |
| Til | Rus |
Светоизлучающий диод, соединения AIII–VV, GaAs, GaN, эпитаксия, газофазная эпитаксия, жидкофазная эпитаксия, гетероструктура, полупроводник, оптоэлектронные устройства, многослойные структуры, Yorug‘lik nurlovchi diod, AIII–VV birikmalari, GaAs, GaN, epitaksiya, gaz fazali epitaksiya, suyuq fazali epitaksiya, geterostruktura, yarimo‘tkazgich, optoelektron qurilmalar, ko‘p qatlamli tuzilmalar, Light-emitting diode, AIII–VV compounds, GaAs, GaN, epitaxy, gas-phase epitaxy, liquid-phase epitaxy, heterostructure, semiconductor, optoelectronic devices, multilayer structures
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