The research results of photosensitivity of Au-νGaAs:O-nCdS-nInP-Au heterojunction structure under various electrical circuit configuration are presented. It is experimentally shown that irrespective of the excited surface, they differ in photosensitivity in the spectral range of 0.85-0.9 µm and 1.31−1.55 µm, which is associated with photogeneration processes in high-resistance gallium arsenide and photoemission processes from metal to semiconductor.
| Mualliflar | Каримов, А.В., Гиясова, Ф.А., Ёдгорова, Д.М., Абдулхаев, О.А. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-07-03 |
| Jild | 22 |
| Son | 1 |
| Betlar | 33-38 |
| Til | Rus |
| DOI | 10.52304/.v22i1.176 |
DOI: 10.52304/.v22i1.176 · Maqolaning asl sahifasi
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