PHOTOSENSITIVITY OF A MULTILAYER STRUCTURE WITH POTENTIAL BARRIERS

Каримов, А.В., Гиясова, Ф.А., Ёдгорова, Д.М., Абдулхаев, О.А.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

The research results of photosensitivity of Au-νGaAs:O-nCdS-nInP-Au heterojunction structure under various electrical circuit configuration are presented. It is experimentally shown that irrespective of the excited surface, they differ in photosensitivity in the spectral range of 0.85-0.9 µm and 1.31−1.55 µm, which is associated with photogeneration processes in high-resistance gallium arsenide and photoemission processes from metal to semiconductor.

Maqola ma’lumotlari
MualliflarКаримов, А.В., Гиясова, Ф.А., Ёдгорова, Д.М., Абдулхаев, О.А.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2019-07-03
Jild22
Son1
Betlar33-38
TilRus
DOI10.52304/.v22i1.176

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