INFLUENCE OF IONIZED IMPURITIES AND MICROTUBES ON THE CVC of the p-n-4H-SiC transition

Гулямов, А.Г., Жураев, Х.Н., Давлатов, А.Б., Хажиев, М.У., Атабаев, Б.Г., Саидов, Д.Ш., Адилов, Н.Б., Румянцева, Е.В.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

The effect of ionized impurities and microtubes on the reverse breakdown voltage of the p-n junction based on 4H-SiC obtained by low-temperature diffusion was studied. It is shown that using the equation for breakdown voltages and taking into account the ratio of breakdown voltages of the I-V characteristics of the p-n junction, one can determine how much the concentration of ionized impurities and defects has been changed after etching of the crystal and after annealing.

Maqola ma’lumotlari
MualliflarГулямов, А.Г., Жураев, Х.Н., Давлатов, А.Б., Хажиев, М.У., Атабаев, Б.Г., Саидов, Д.Ш., Адилов, Н.Б., Румянцева, Е.В.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2019-07-28
Jild22
Son1
Betlar39-43
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v22i1.177
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v22i1.177 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAГулямов, А.Г., Жураев, Х.Н., Давлатов, А.Б., Хажиев, М.У., Атабаев, Б.Г., Саидов, Д.Ш., Адилов, Н.Б., & Румянцева, Е.В. (2019). INFLUENCE OF IONIZED IMPURITIES AND MICROTUBES ON THE CVC of the p-n-4H-SiC transition. O‘zbekiston fizika jurnali, 22(1), 39-43. https://doi.org/10.52304/.v22i1.177
GOST (OAK)Гулямов, А.Г. va b. INFLUENCE OF IONIZED IMPURITIES AND MICROTUBES ON THE CVC of the p-n-4H-SiC transition // O‘zbekiston fizika jurnali. – 2019. – T. 22, № 1. – P. 39-43. – DOI: 10.52304/.v22i1.177.
MLAГулямов, А.Г., Жураев, Х.Н., Давлатов, А.Б., Хажиев, М.У., Атабаев, Б.Г., Саидов, Д.Ш., Адилов, Н.Б., and Румянцева, Е.В. “INFLUENCE OF IONIZED IMPURITIES AND MICROTUBES ON THE CVC of the p-n-4H-SiC transition.” O‘zbekiston fizika jurnali, 22(1), 39-43, 2019. https://doi.org/10.52304/.v22i1.177
ChicagoГулямов, А.Г., Жураев, Х.Н., Давлатов, А.Б., Хажиев, М.У., Атабаев, Б.Г., Саидов, Д.Ш., Адилов, Н.Б., and Румянцева, Е.В. “INFLUENCE OF IONIZED IMPURITIES AND MICROTUBES ON THE CVC of the p-n-4H-SiC transition.” O‘zbekiston fizika jurnali, 22(1), 39-43 (2019). https://doi.org/10.52304/.v22i1.177
HarvardГулямов, А.Г., Жураев, Х.Н., Давлатов, А.Б., Хажиев, М.У., Атабаев, Б.Г., Саидов, Д.Ш., Адилов, Н.Б., and Румянцева, Е.В (2019) ‘INFLUENCE OF IONIZED IMPURITIES AND MICROTUBES ON THE CVC of the p-n-4H-SiC transition’, O‘zbekiston fizika jurnali, 22(1), 39-43. https://doi.org/10.52304/.v22i1.177
BibTeX
@article{article2019,
  title = {INFLUENCE OF IONIZED IMPURITIES AND MICROTUBES ON THE CVC of the p-n-4H-SiC transition},
  author = {Гулямов, А.Г. and Жураев, Х.Н. and Давлатов, А.Б. and Хажиев, М.У. and Атабаев, Б.Г. and Саидов, Д.Ш. and Адилов, Н.Б. and Румянцева, Е.В.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2019},
  volume = {22},
  number = {1},
  pages = {39-43},
  doi = {10.52304/.v22i1.177},
  url = {https://doi.org/10.52304/.v22i1.177}
}

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