The effect of ionized impurities and microtubes on the reverse breakdown voltage of the p-n junction based on 4H-SiC obtained by low-temperature diffusion was studied. It is shown that using the equation for breakdown voltages and taking into account the ratio of breakdown voltages of the I-V characteristics of the p-n junction, one can determine how much the concentration of ionized impurities and defects has been changed after etching of the crystal and after annealing.
| Mualliflar | Гулямов, А.Г., Жураев, Х.Н., Давлатов, А.Б., Хажиев, М.У., Атабаев, Б.Г., Саидов, Д.Ш., Адилов, Н.Б., Румянцева, Е.В. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-07-28 |
| Jild | 22 |
| Son | 1 |
| Betlar | 39-43 |
| Til | Rus |
| DOI | 10.52304/.v22i1.177 |
DOI: 10.52304/.v22i1.177 · Maqolaning asl sahifasi
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