Composition and electronic structure of WO3 thin films deposited on a Si surface

Хужаниёзов, Ж.Б., Умирзаков, Б.Е., Абдувайитов, А.А., Болтаев, Х.Х., Кодирова, И.К.

O‘zbekiston fizika jurnali · 2026-yil

Annotatsiya

The composition and electronic structure of tungsten films with surface oxygen (O2) layerswere investigated using photoelectron and electron spectroscopy methods under ultra-high vacuumconditions. It was found that molecular oxygen (O2) is not absorbed into the near-surfacelayer of tungsten. On the tungsten surface, O2 dissociates into its atomic components at a substratetemperature of approximately 650 K and diffuses into the near-surface region. At T ≈950 K, WO4 films are formed, while at T ≈ 1050–1100 K, WO3 films are produced. For thefirst time, the electronic structure of WO3 film surfaces obtained by oxidation of thin tungstenfilms has been comprehensively analyzed.

Maqola ma’lumotlari
MualliflarХужаниёзов, Ж.Б., Умирзаков, Б.Е., Абдувайитов, А.А., Болтаев, Х.Х., Кодирова, И.К.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2026-02-18
Jild27
Son4
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v27i4.617
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v27i4.617 · Maqolaning asl sahifasi

Kalit so‘zlar

фотоэлектронные спектры, многослойные структуры, оже-электрон, эмиссия, оксид пленки, адсорбция, диффузия, поверхность, широкозонный полупроводник, photoelectron spectra, multilayer structures, Auger electron spectroscopy, emission, oxide film, adsorption, diffusion, surface, wide band gap semiconductor

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAХужаниёзов, Ж.Б., Умирзаков, Б.Е., Абдувайитов, А.А., Болтаев, Х.Х., & Кодирова, И.К. (2026). Composition and electronic structure of WO3 thin films deposited on a Si surface. O‘zbekiston fizika jurnali, 27(4). https://doi.org/10.52304/.v27i4.617
GOST (OAK)Хужаниёзов, Ж.Б. va b. Composition and electronic structure of WO3 thin films deposited on a Si surface // O‘zbekiston fizika jurnali. – 2026. – T. 27, № 4. – DOI: 10.52304/.v27i4.617.
MLAХужаниёзов, Ж.Б., Умирзаков, Б.Е., Абдувайитов, А.А., Болтаев, Х.Х., and Кодирова, И.К. “Composition and electronic structure of WO3 thin films deposited on a Si surface.” O‘zbekiston fizika jurnali, 27(4), 2026. https://doi.org/10.52304/.v27i4.617
ChicagoХужаниёзов, Ж.Б., Умирзаков, Б.Е., Абдувайитов, А.А., Болтаев, Х.Х., and Кодирова, И.К. “Composition and electronic structure of WO3 thin films deposited on a Si surface.” O‘zbekiston fizika jurnali, 27(4) (2026). https://doi.org/10.52304/.v27i4.617
HarvardХужаниёзов, Ж.Б., Умирзаков, Б.Е., Абдувайитов, А.А., Болтаев, Х.Х., and Кодирова, И.К (2026) ‘Composition and electronic structure of WO3 thin films deposited on a Si surface’, O‘zbekiston fizika jurnali, 27(4). https://doi.org/10.52304/.v27i4.617
BibTeX
@article{article2026,
  title = {Composition and electronic structure of WO3 thin films deposited on a Si surface},
  author = {Хужаниёзов, Ж.Б. and Умирзаков, Б.Е. and Абдувайитов, А.А. and Болтаев, Х.Х. and Кодирова, И.К.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2026},
  volume = {27},
  number = {4},
  doi = {10.52304/.v27i4.617},
  url = {https://doi.org/10.52304/.v27i4.617}
}

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