The composition and electronic structure of tungsten films with surface oxygen (O2) layerswere investigated using photoelectron and electron spectroscopy methods under ultra-high vacuumconditions. It was found that molecular oxygen (O2) is not absorbed into the near-surfacelayer of tungsten. On the tungsten surface, O2 dissociates into its atomic components at a substratetemperature of approximately 650 K and diffuses into the near-surface region. At T ≈950 K, WO4 films are formed, while at T ≈ 1050–1100 K, WO3 films are produced. For thefirst time, the electronic structure of WO3 film surfaces obtained by oxidation of thin tungstenfilms has been comprehensively analyzed.
| Mualliflar | Хужаниёзов, Ж.Б., Умирзаков, Б.Е., Абдувайитов, А.А., Болтаев, Х.Х., Кодирова, И.К. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2026-02-18 |
| Jild | 27 |
| Son | 4 |
| Til | Rus |
| DOI | 10.52304/.v27i4.617 |
DOI: 10.52304/.v27i4.617 · Maqolaning asl sahifasi
фотоэлектронные спектры, многослойные структуры, оже-электрон, эмиссия, оксид пленки, адсорбция, диффузия, поверхность, широкозонный полупроводник, photoelectron spectra, multilayer structures, Auger electron spectroscopy, emission, oxide film, adsorption, diffusion, surface, wide band gap semiconductor
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