In the study the effect of doping by boron (B) on the electrical properties of double-walledcarbon nanotubes (DWCNTs) at various temperatures (from 300 K to 1500 K was investigated.The introduction of boron atoms into the (5,5) @(10,10) structure of DWCNTs was analyzedto determine how the doping level (ρ%) influences the distribution of partial charge. Our resultsshow that boron doping increases the partial charge within the nanotube structure, andthis increase is nonlinear as the doping concentration rises from 0% to 10%. This behavior isattributed to the lower electronegativity of boron compared to carbon, which introduces holecarriers and enhances the p-type semiconducting properties. However, when the doping levelexceeds 5%, the resulting defects disrupt electron network, leading to a decrease in electricalconductivity. The findings indicate that boron doping has a complex impact on the structuraland electronic properties of DWCNTs. Temperature and dopant concentration are critical factorsin determining the performance characteristics of these materials.
| Mualliflar | Муминова, Ш.А., Юсупов, Э.Х., Ядгаров, И.Д., Умаров, Ф.Ф., Улжаев, У.Б. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2026-02-18 |
| Jild | 27 |
| Son | 4 |
| Til | Rus |
| DOI | 10.52304/.v27i4.614 |
DOI: 10.52304/.v27i4.614 · Maqolaning asl sahifasi
двустенная углеродная нанотрубка, легирование бором, реактивная молекулярная динамика, double-walled carbon nanotube, boron doping, reactive molecular dynamics
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