The effect of boron doping on charge distribution in double-wall carbon nanotubes

Муминова, Ш.А., Юсупов, Э.Х., Ядгаров, И.Д., Умаров, Ф.Ф., Улжаев, У.Б.

O‘zbekiston fizika jurnali · 2026-yil

Annotatsiya

In the study the effect of doping by boron (B) on the electrical properties of double-walledcarbon nanotubes (DWCNTs) at various temperatures (from 300 K to 1500 K was investigated.The introduction of boron atoms into the (5,5) @(10,10) structure of DWCNTs was analyzedto determine how the doping level (ρ%) influences the distribution of partial charge. Our resultsshow that boron doping increases the partial charge within the nanotube structure, andthis increase is nonlinear as the doping concentration rises from 0% to 10%. This behavior isattributed to the lower electronegativity of boron compared to carbon, which introduces holecarriers and enhances the p-type semiconducting properties. However, when the doping levelexceeds 5%, the resulting defects disrupt electron network, leading to a decrease in electricalconductivity. The findings indicate that boron doping has a complex impact on the structuraland electronic properties of DWCNTs. Temperature and dopant concentration are critical factorsin determining the performance characteristics of these materials.

Maqola ma’lumotlari
MualliflarМуминова, Ш.А., Юсупов, Э.Х., Ядгаров, И.Д., Умаров, Ф.Ф., Улжаев, У.Б.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2026-02-18
Jild27
Son4
TilRus
DOI10.52304/.v27i4.614

Kalit so‘zlar

двустенная углеродная нанотрубка, легирование бором, реактивная молекулярная динамика, double-walled carbon nanotube, boron doping, reactive molecular dynamics

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