A study of copper distribution during thermal diffusion in germanium layers on silicon oxide

Халматов, А.С., Джаббарганов, Р., Исаханов, З.А.

O‘zbekiston fizika jurnali · 2026-yil

Annotatsiya

In the study, the diffusion of copper atoms in crystallized poly-germanium films deposited on aSiO2 substrate at a temperature of 550 K was investigated using secondary ion mass spectrometry(SIMS). The obtained mass spectra for films of different thicknesses (0.07 and 0.36 μm)showed that copper actively diffuses through the poly-germanium and accumulates at theGe/SiO2 interface. A phenomenon of reverse diffusion of copper from the interface back intothe film observed, most prominently in thin films (0.07 μm). This may relate to interfaceeffects and the presence of defects in the crystalline structure of Ge and SiO2 that promotecopper accumulation. The presented results indicate differences in diffusion mechanismsdepending on the film thickness and highlight role of interfacial effects in shaping the copperconcentration profile.

Maqola ma’lumotlari
MualliflarХалматов, А.С., Джаббарганов, Р., Исаханов, З.А.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2026-02-18
Jild27
Son4
TilRus
DOI10.52304/.v27i4.616

Kalit so‘zlar

вторичная ионная масс-спектрометрия (ВИМС), медь, полигерманий, граница, отжиг, диффузия, secondary ion mass spectrometry (SIMS), poly-germanium, boundary, annealing, diffusion

Ilmiy soha

O‘zbekiston fizika jurnali jurnalidan boshqa maqolalar

O‘zbekiston fizika jurnali — barcha maqolalar