In the study, the diffusion of copper atoms in crystallized poly-germanium films deposited on aSiO2 substrate at a temperature of 550 K was investigated using secondary ion mass spectrometry(SIMS). The obtained mass spectra for films of different thicknesses (0.07 and 0.36 μm)showed that copper actively diffuses through the poly-germanium and accumulates at theGe/SiO2 interface. A phenomenon of reverse diffusion of copper from the interface back intothe film observed, most prominently in thin films (0.07 μm). This may relate to interfaceeffects and the presence of defects in the crystalline structure of Ge and SiO2 that promotecopper accumulation. The presented results indicate differences in diffusion mechanismsdepending on the film thickness and highlight role of interfacial effects in shaping the copperconcentration profile.
| Mualliflar | Халматов, А.С., Джаббарганов, Р., Исаханов, З.А. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2026-02-18 |
| Jild | 27 |
| Son | 4 |
| Til | Rus |
| DOI | 10.52304/.v27i4.616 |
DOI: 10.52304/.v27i4.616 · Maqolaning asl sahifasi
вторичная ионная масс-спектрометрия (ВИМС), медь, полигерманий, граница, отжиг, диффузия, secondary ion mass spectrometry (SIMS), poly-germanium, boundary, annealing, diffusion
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