In the study, the performance and working mechanisms of memristors based on organicinorganichalide perovskite (OIHP) materials with two distinct configurations: ITO/PEDOT:PSS/Cs0.15MA0.15FA0.7Pb(I0.8Br0.2)3/InGa and PSS/Cs0.15MA0.15FA0.7Pb(I0.8Br0.2)3/CNT/InGaare investigated. Perovskite materials have been shown to exhibit resistive switching behaviorsuitable for memristor applications due to their ion migration and filament formation properties.Here, the impact of incorporating single-walled carbon nanotubes (SWCNTs) into thestructure is examined. Results indicate that the presence of SWCNTs enhances device performance,including increased current density and improved on/off ratios. These enhancementsare attributed to the excellent electrical conductivity and filament formation properties ofSWCNTs.
| Mualliflar | Botirova, N.U., Yuldashev, Sh.U. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2026-02-18 |
| Jild | 27 |
| Son | 4 |
| Til | Ingliz |
| DOI | 10.52304/.v27i4.621 |
DOI: 10.52304/.v27i4.621 · Maqolaning asl sahifasi
перовскит, мемристор, резистивное переключение, одностенные углеродные нанотрубки (SWCNT), ионная миграция, perovskite, memristor, resistive switching, SWCNT, ion migration
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