In this paper, a new method for determining the density of defect states of amorphous semiconductorsis proposed. It is shown that if the experimental curve of the optical absorptionspectrum of an amorphous semiconductor is measured, using this spectrum it is possible to determinethe distribution of the density of electronic states of defects. Using the Kubo-Greenwood formula written for defect absorption and the experimental spectrum of defect absorption,the densities of electronic states of defects in amorphous semiconductors are determined.
| Mualliflar | Икрамов, Р.Г., Нуриддинова, М.А., Муминов, Х.А., Султанов, Б.K., Абдулазизов, Б.Т. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2026-02-18 |
| Jild | 27 |
| Son | 4 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v27i4.613 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v27i4.613 · Maqolaning asl sahifasi
аморфные полупроводники, оптические переходы электронов с участием дефектов, парциальные спектры дефектного поглощения, плотность электронных состояний на дефектах, amorphous semiconductors, optical transitions of electrons with the participation of defects, partial spectra of defect absorption, density of electron states in defects
| APA | Икрамов, Р.Г., Нуриддинова, М.А., Муминов, Х.А., Султанов, Б.K., & Абдулазизов, Б.Т. (2026). Calculation of the density of electron states of defects in a-Si:H. O‘zbekiston fizika jurnali, 27(4). https://doi.org/10.52304/.v27i4.613 |
|---|---|
| GOST (OAK) | Икрамов, Р.Г. va b. Calculation of the density of electron states of defects in a-Si:H // O‘zbekiston fizika jurnali. – 2026. – T. 27, № 4. – DOI: 10.52304/.v27i4.613. |
| MLA | Икрамов, Р.Г., Нуриддинова, М.А., Муминов, Х.А., Султанов, Б.K., and Абдулазизов, Б.Т. “Calculation of the density of electron states of defects in a-Si:H.” O‘zbekiston fizika jurnali, 27(4), 2026. https://doi.org/10.52304/.v27i4.613 |
| Chicago | Икрамов, Р.Г., Нуриддинова, М.А., Муминов, Х.А., Султанов, Б.K., and Абдулазизов, Б.Т. “Calculation of the density of electron states of defects in a-Si:H.” O‘zbekiston fizika jurnali, 27(4) (2026). https://doi.org/10.52304/.v27i4.613 |
| Harvard | Икрамов, Р.Г., Нуриддинова, М.А., Муминов, Х.А., Султанов, Б.K., and Абдулазизов, Б.Т (2026) ‘Calculation of the density of electron states of defects in a-Si:H’, O‘zbekiston fizika jurnali, 27(4). https://doi.org/10.52304/.v27i4.613 |
| BibTeX | @article{article2026,
title = {Calculation of the density of electron states of defects in a-Si:H},
author = {Икрамов, Р.Г. and Нуриддинова, М.А. and Муминов, Х.А. and Султанов, Б.K. and Абдулазизов, Б.Т.},
journal = {O‘zbekiston fizika jurnali},
year = {2026},
volume = {27},
number = {4},
doi = {10.52304/.v27i4.613},
url = {https://doi.org/10.52304/.v27i4.613}
} |
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