Архив НАУЧНЫЙ ЖУРНАЛ "ФИЗИКА ПОЛУПРОВОДНИКОВ И МИКРОЭЛЕКТРОНИКА" НИИ ФИЗИКИ ПОЛУПРОВОДНИКОВ И МИКРОЭЛЕКТРОНИКИ ПРИ НУУЗ ИМ. МИРЗО УЛУГБЕКА СВИДЕТЕЛЬСТВО О РЕГИСТАЦИИ СМИ №1016 ОТ 16.09.2020 ISSN 2181-9947, E-ISSN 2181-1652 DOI 10.37681/2181-9947-019-X ЖУРНАЛ ВЫХОДИТ 4 РАЗА В ГОД ЖУРНАЛ ВКЛЮЧЕН В ПЕРЕЧЕНЬ ВАК РЕСПУБЛИКИ УЗБЕКИСТАН_______________ РАЗРАБОТКИ НИИ РУС ENG ГЛАВНАЯ РЕДСОВЕТ РЕДКОЛЛЕГИЯ…
Boshqa yozuvda: (2019) Yarimo‘tkazgichlar fizikasi va mikroelektronika jurnali
| Nashriyot | Яримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти |
|---|---|
| Shahar | Toshkent |
| ISSN | 2181-9947 |
| e-ISSN | 2181-1652 |
| Boshqa yozuvda | (2019) Yarimo‘tkazgichlar fizikasi va mikroelektronika jurnali |
| Tashkil etilgan | 2020 |
| Nashr davriyligi | Yiliga 4 marta (choraklik) |
| Ilmiy sohalari | Fizika-matematika |
| OAK ixtisoslik kodi | 01.00.00 (Физика-математика фанлари) |
| Jurnal turi | Миллий |
| OAK holati | Ro‘yxatda |
| Maqolalar indeksda | 63 (2021) |
| Indekslash | Scopus |
Telegram orqali maqola yuborish
(2019) Яримўтказгичлар физикаси ва микроэлектроника журнали — rasmiy sayti
Taqriz jarayoni jurnal saytida ko‘rsatilgan
| Ixtisoslik | Soha | Qaror | Sana | Holati | Turi |
|---|---|---|---|---|---|
| 01.00.00 | Физика-математика фанлари | 2019 | Актив | Миллий |
| E-pochta | ispm_uz@mail.ru |
|---|---|
| Telefon | 2181-9947-019 |
| Telefon | 305671809 |
| Telefon | 201122919 |
The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the…
t was found in the work that for p-and- n-photodiodes on the reverse branch current- voltage characteristic, steps are observed in the region of voltages of 25 and 70 V due to the terminology-intensive procedure for…
In this paper three criteria for choosing power switches for DC-to-DC converter o f stand-alone photovoltaic system voltage inverter was discussed, that allowed to choose metal oxide semiconductor field-effect…
A device has been developed for studying strain sensitivity in photosensitive wide- gap semiconductor thin films. The device allows the study o f strain sensitivity in photosensitive wide- gap semiconductor thin films…
The study o f the load current-voltage characteristics o f a solar photovoltaic module based on a polycrystalline semiconductor binary compound Cu (In, Ga) Se 2 under normal sunlight Prad = (800 ± 5) W/m2, in a…
Results o f research o f influence o f single mono- and multilayered antireflection coverings on optical characteristics of silicon are discussed. Results received by program system "PVlighthouse" with the appendix…
The influence o f ytterbium atoms on the electrophysical properties o f silicon MIS- structures is investigated by means o f CC-DLTS and high-frequency volt- faradic characteristics. It is shown that the presence o f…
The article presents the main results o f the manufacturing technology o f Si(Li) two- coordinate sensitive nuclear radiation detectors based on single-crystal silicon with the dimensions o f the numerical region 50*50…
Processes o f current transport in p-n- structure obtained on the base o f linear graded-band semiconductor are researched. Principal equation at conditions o f quasielectricalfields for electrons and holes was…
The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity…
The two-band model is used to calculate the cyclotron mass o f an electron in an InAs quantum well. The calculations were performed in the approximation o f infinity o f the depth o f the quantum well, taking into…
In this paper, we studied the effect o f Co60 gamma-ray irradiation on the optical characteristics o f single and several compressed-stressed CdxZm-xSe/ZnSe QCS with the composition x=0.2-0.4 grown by molecular beam…
For the first time, a mathematical model was developed for determining the effect o f temperature and a quantizing magnetic field on oscillations o f the Fermi energy in nanoscale semiconductor structures with a…
Ha. (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали O‘zbekiston Oliy attestatsiya komissiyasi (OAK) ro‘yxatidagi ilmiy jurnal, ixtisoslik: 01.00.00 Физика-математика фанлари.
ISSN 2181-9947, e-ISSN 2181-1652.
Яримўтказгичлар физикаси ва микроэлектроника илмий- тадқиқот институти (Toshkent).
Sohalar: Fizika-matematika.
Maqola jurnalning rasmiy sayti orqali topshiriladi: http://journal.ispm.uz/. E-pochta: ispm_uz@mail.ru.