The high efficiency of using the Raman spectroscopy method in complex investigations of a number of physical properties of research objects has been demonstrated. On the example of the analysis of the Raman spectra of silicon carbide samples, by the presence of spectral bands at 194 cm−1 , 777 cm−1 , and 827 cm−1 , it was determined that the sample of single-crystal silicon carbide belongs to the 4H polytype.The Raman spectra of cadmium selenide samples were used for monitoring the amorphous and crystalline phases in cadmium selenide films. It is shown that annealing of a cadmium selenide sample at a temperature of 800°C leads to a significant decrease in the intensity of the spectral band corresponding to the amorphous component. The characteristic changes occurring in single-crystal silicon during implantation with boron with different concentrations have been investigated by Raman spectroscopy. The issue of the observed broadening and frequency shift of the peak, which indicates the appearance of stresses, deformation, and defects in the crystal lattice, resulting from the process of ion implantation of boron, is considered in detail.
| Mualliflar | Ротштейн, Владимир М., Ашуров, Х.Б., Ашуров, Р.Х. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2021-12-07 |
| Jild | 23 |
| Son | 4 |
| Til | Rus |
| DOI | 10.52304/.v23i4.292 |
DOI: 10.52304/.v23i4.292 · Maqolaning asl sahifasi
комплексные аналитические исследования, спектрометрия комбинационного рассеяния, политипы кристаллов, аморфный кремний, процесс имплантации, complex analytical studies, Raman spectrometry, crystal polytypes, amorphous silicon, implantation process
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