In this work, we consider the experimental data on the oxidation of the silicon surface in vacuum with subsequent annealing obtained by total current spectroscopy. Studies have shown that when using temperature annealing to clean the silicon surface from contamination, there are pluses and minuses. Prolonged annealing at high temperatures, which leads to silicon oxidation, must not be allowed. And the use of a short time flash can only be used to remove a physically (not chemically) adsorbed layer of atoms.
| Mualliflar | Шаропов, У.Б. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2021-11-24 |
| Jild | 23 |
| Son | 4 |
| Til | Rus |
| DOI | 10.52304/.v23i4.287 |
DOI: 10.52304/.v23i4.287 · Maqolaning asl sahifasi
спектроскопия полного тока, кремний, отжиг, поверхность, total current spectroscopy, silicon, annealing, surface
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