he structural properties of thin-film solid solutions (GaAs)1-х(Ge2)x grown by liquid-phase epitaxy on GaAs single crystal substrates are studied. The resulting epitaxial layers had a thickness of 10 µm, a resistivity of 0.17 Ohmcm, and p-type conductivity. Morphological studies using atomic force microscopy (AFM) showed that the nanocones observed on the surface of (GaAs)1-x(Ge2)x epitaxial layers are due to the presence of Ge atoms in them. The photosensitivity spectra of these solid solutions have peculiar fluctuations due to the formation in them of various complexes of charged ions of atoms that make up the components. Analysis of the photosensitivity spectra of n-GaAs-p-(GaAs)1-x(Ge2)x heterostructures using the Wolfram Mathematics 7 software showed that its spectrum consists of three peaks due to As-Ge, Ge-Ge and Ga-Ge.
| Mualliflar | Зайнабидинов, С.З., Бобоев, А.Й., Абдурахимов, Д.П. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2021-10-14 |
| Jild | 23 |
| Son | 4 |
| Til | Rus |
| DOI | 10.52304/.v23i4.288 |
DOI: 10.52304/.v23i4.288 · Maqolaning asl sahifasi
жидкофазная эпитаксия, рентгенограмма, подложка, пленка, сфалерит, наноконус, фоточуствительность, photosensitivity, nanocone, sphalerite, film, substrate, X-ray diffraction pattern, liquid-phase epitaxy
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