TEMPERATURE DEPENDENCE OF THE OUTPUT PARAMETERS OF A POLYCRYSTALLINE SILICON PHOTOELECTRIC MODULE IN TASHKENT CONDITIONS

Матчанов, Н.А., Атабоев, О.К., Кабулов, Р.Р.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

The light load current-voltage characteristics of solar photovoltaic module based on polycrystalline silicon have been studied at the temperature range of t=(19−40)°С under conditions of natural solar illumination (Рrad=870±5 W/m2 ). It is found that the value of photogenerated current increases linearly with temperature, which is explained by an increase in diffusion length of minority carriers, due to an increase in lifetime of minority carriers. The decrease in the value of open-circuit voltage with increasing temperature, is explained by exponential increase in reverse saturation current and narrowing in band gap of semiconductor. It has been found that the fill factor (FF) of current-voltage characteristics decreases linearly with increasing temperature according to the law FF= (79.5−0.0845)t (%) and has a negative temperature coefficient k = −0.108%/°С, which is associated with a decrease in open-circuit voltage. In the studied temperature range, the efficiency of solar photovoltaic module decreases from 17.6% to 16.93% and has a negative temperature coefficient of −0.19%/°С.

Maqola ma’lumotlari
MualliflarМатчанов, Н.А., Атабоев, О.К., Кабулов, Р.Р.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2019-09-10
Jild22
Son2
Betlar99-106
TilRus
DOI10.52304/.v22i2.185

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