By the complex methods of labeled atoms (169Er, 170Tm , 153Sm и 175Y b ), autoradiography, measurements of electrical conductivity and Hall effect, isothermal relaxation of capacitance and current, diffusion, solubility and electro-physical properties of rare-earth elements: erbium, thulium, samarium and ytterbium in silicon were studied in various annealing media and for a wide temperature range (1100-1250°С). Diffusion parameters, solubility were established, and a small acceptor nature of the studied rare-earth impurities of erbium, thulium, samarium, and ytterbium was revealed on the surface and in the bulk of и-type silicon. The distributions of Er, Tm, Sm и Yb in silicon are the sharply decreasing curves satisfactorily approximated by the erfc-function corresponding to the solution of the Fick equation for the diffusion from a constant source into a semi-restricted body. It is assumed that impurities of Er, Tm, Sm and Yb under investigation are the substitutional impurities and they are diffused by the vacancy mechanizm.
| Mualliflar | Назиров, Д.Э., Жураева, М.Ф., Фармонова, Ш.Ю. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2020-01-09 |
| Jild | 22 |
| Son | 4 |
| Betlar | 237-242 |
| Til | Rus |
| DOI | 10.52304/.v22i4.164 |
DOI: 10.52304/.v22i4.164 · Maqolaning asl sahifasi
диффузия, растворимость, эрбий, тулий, самарий, иттербий, кремний и-типа, методы меченых атомов, авторадиографии, измерения электропроводности и эффекта Холла, изотермической релаксации емкости и тока., Diffusion, solubility, erbium , thulium , samarium , ytterbium , n-type silicon, methods of labeled atom s, autoradiography, measurement of electrical conductivity an d the Hall effect, isotherm al relaxation of capacitance an d current.
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