Study of diffusion and electrophysical properties of erbium, thulium, samarium and ytterbium in silicon

Назиров, Д.Э., Жураева, М.Ф., Фармонова, Ш.Ю.

O‘zbekiston fizika jurnali · 2020-yil

Annotatsiya

By the complex methods of labeled atoms (169Er, 170Tm , 153Sm и 175Y b ), autoradiography, measurements of electrical conductivity and Hall effect, isothermal relaxation of capacitance and current, diffusion, solubility and electro-physical properties of rare-earth elements: erbium, thulium, samarium and ytterbium in silicon were studied in various annealing media and for a wide temperature range (1100-1250°С). Diffusion parameters, solubility were established, and a small acceptor nature of the studied rare-earth impurities of erbium, thulium, samarium, and ytterbium was revealed on the surface and in the bulk of и-type silicon. The distributions of Er, Tm, Sm и Yb in silicon are the sharply decreasing curves satisfactorily approximated by the erfc-function corresponding to the solution of the Fick equation for the diffusion from a constant source into a semi-restricted body. It is assumed that impurities of Er, Tm, Sm and Yb under investigation are the substitutional impurities and they are diffused by the vacancy mechanizm.

Maqola ma’lumotlari
MualliflarНазиров, Д.Э., Жураева, М.Ф., Фармонова, Ш.Ю.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2020-01-09
Jild22
Son4
Betlar237-242
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v22i4.164
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v22i4.164 · Maqolaning asl sahifasi

Kalit so‘zlar

диффузия, растворимость, эрбий, тулий, самарий, иттербий, кремний и-типа, методы меченых атомов, авторадиографии, измерения электропроводности и эффекта Холла, изотермической релаксации емкости и тока., Diffusion, solubility, erbium , thulium , samarium , ytterbium , n-type silicon, methods of labeled atom s, autoradiography, measurement of electrical conductivity an d the Hall effect, isotherm al relaxation of capacitance an d current.

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAНазиров, Д.Э., Жураева, М.Ф., & Фармонова, Ш.Ю. (2020). Study of diffusion and electrophysical properties of erbium, thulium, samarium and ytterbium in silicon. O‘zbekiston fizika jurnali, 22(4), 237-242. https://doi.org/10.52304/.v22i4.164
GOST (OAK)Назиров, Д.Э., Жураева, М.Ф., Фармонова, Ш.Ю. Study of diffusion and electrophysical properties of erbium, thulium, samarium and ytterbium in silicon // O‘zbekiston fizika jurnali. – 2020. – T. 22, № 4. – P. 237-242. – DOI: 10.52304/.v22i4.164.
MLAНазиров, Д.Э., Жураева, М.Ф., and Фармонова, Ш.Ю. “Study of diffusion and electrophysical properties of erbium, thulium, samarium and ytterbium in silicon.” O‘zbekiston fizika jurnali, 22(4), 237-242, 2020. https://doi.org/10.52304/.v22i4.164
ChicagoНазиров, Д.Э., Жураева, М.Ф., and Фармонова, Ш.Ю. “Study of diffusion and electrophysical properties of erbium, thulium, samarium and ytterbium in silicon.” O‘zbekiston fizika jurnali, 22(4), 237-242 (2020). https://doi.org/10.52304/.v22i4.164
HarvardНазиров, Д.Э., Жураева, М.Ф., and Фармонова, Ш.Ю (2020) ‘Study of diffusion and electrophysical properties of erbium, thulium, samarium and ytterbium in silicon’, O‘zbekiston fizika jurnali, 22(4), 237-242. https://doi.org/10.52304/.v22i4.164
BibTeX
@article{article2020,
  title = {Study of diffusion and electrophysical properties of erbium, thulium, samarium and ytterbium in silicon},
  author = {Назиров, Д.Э. and Жураева, М.Ф. and Фармонова, Ш.Ю.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2020},
  volume = {22},
  number = {4},
  pages = {237-242},
  doi = {10.52304/.v22i4.164},
  url = {https://doi.org/10.52304/.v22i4.164}
}

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