The influence of the influence of reverse displacement on the parameters of solar elements based on cigs

Камилов, А.Г.

O‘zbekiston fizika jurnali · 2020-yil

Annotatsiya

The results of laboratory experiments to study the effect of reverse bias with a duration of 60, 600 and 2000 s. on the parameters of solar cells (SC) based on an absorbing layer consisting of Cu, In, Ga and Se (CIGS) with different thicknesses of the CdS buffer layer are shown. Experiments have shown that for the stable operation of CIGS SCs under natural operating conditions, the thickness of their buffer layer should be calculated taking into account the effect of reverse bias. The results of measuring the current-voltage characteristics of CIGS SCs with different thicknesses of the CdS layer before and after the exposure to the reverse bias showed that SCs with a smaller buffer layer thickness are more resistant to the effect of reverse bias. Based on the results of measuring the capacitance-voltage characteristics, it was found that when exposed to reverse bias in the dark, the capacitance of the structure increases, which corresponds to the classical model of the effect of reverse bias, and is the same for elements with different thicknesses of the buffer layer. After exposure to reverse bias under illumination, the capacitance of the structure and the concentration of charge carriers decrease, and to a lesser extent in elements with a thin buffer layer, which also indicates their resistance to reverse bias.

Maqola ma’lumotlari
MualliflarКамилов, А.Г.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2020-08-25
Jild22
Son4
Betlar227-236
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v22i4.163
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v22i4.163 · Maqolaning asl sahifasi

Kalit so‘zlar

солнечные элементы, буферный слой, CIGS, обратное смещение, концентрация носителей, КПД, ВАХ, ВФХ., solar cells, buffer layer, CIGS, reverse bias, carrier concentration, efficiency, I-V, C-V.

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAКамилов, А.Г. (2020). THE INFLUENCE OF THE INFLUENCE OF REVERSE DISPLACEMENT ON THE PARAMETERS OF SOLAR ELEMENTS BASED ON CIGS. O‘zbekiston fizika jurnali, 22(4), 227-236. https://doi.org/10.52304/.v22i4.163
GOST (OAK)Камилов, А.Г. THE INFLUENCE OF THE INFLUENCE OF REVERSE DISPLACEMENT ON THE PARAMETERS OF SOLAR ELEMENTS BASED ON CIGS // O‘zbekiston fizika jurnali. – 2020. – T. 22, № 4. – P. 227-236. – DOI: 10.52304/.v22i4.163.
MLAКамилов, А.Г. “THE INFLUENCE OF THE INFLUENCE OF REVERSE DISPLACEMENT ON THE PARAMETERS OF SOLAR ELEMENTS BASED ON CIGS.” O‘zbekiston fizika jurnali, 22(4), 227-236, 2020. https://doi.org/10.52304/.v22i4.163
ChicagoКамилов, А.Г. “THE INFLUENCE OF THE INFLUENCE OF REVERSE DISPLACEMENT ON THE PARAMETERS OF SOLAR ELEMENTS BASED ON CIGS.” O‘zbekiston fizika jurnali, 22(4), 227-236 (2020). https://doi.org/10.52304/.v22i4.163
HarvardКамилов, А.Г (2020) ‘THE INFLUENCE OF THE INFLUENCE OF REVERSE DISPLACEMENT ON THE PARAMETERS OF SOLAR ELEMENTS BASED ON CIGS’, O‘zbekiston fizika jurnali, 22(4), 227-236. https://doi.org/10.52304/.v22i4.163
BibTeX
@article{article2020,
  title = {THE INFLUENCE OF THE INFLUENCE OF REVERSE DISPLACEMENT ON THE PARAMETERS OF SOLAR ELEMENTS BASED ON CIGS},
  author = {Камилов, А.Г.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2020},
  volume = {22},
  number = {4},
  pages = {227-236},
  doi = {10.52304/.v22i4.163},
  url = {https://doi.org/10.52304/.v22i4.163}
}

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