Optical and electrophysical properties of GaAs(O):Cr

Tashmetov, M.Yu., Djangabaev, Kh.N., Abdaminov, A.B., Ismatov, N.B., Madiyarov, D.N., Ismailov, K.A., Tolbanov, O.P.

O‘zbekiston fizika jurnali · 2026-yil

Annotatsiya

The elemental composition of GaAs(O):Cr was determined using energy-dispersive spectroscopy and found to be: gallium 47.71 at.%, arsenic 44.37 at.%, chromium 0.10 at.%, and oxygen 7.82 at.%. The material was found to possess a cubic crystal structure (space group F43m) with a lattice parameter of a = 5.6538 Å and an average crystallite size of 44.24 nm. Raman spectroscopy revealed peaks at 159, 196, 252, 277, 328, 349, 411, 500 cm−1, corresponding to phonon modes in GaAs(O):Cr and their modifications due to the presence of oxygen andchromium dopants. These observations indicate that doping has a significant effect on the vibrational properties of the crystal lattice. Fourier-transform infrared spectroscopy identified local vibrational modes at 578, 620, 717, 733, 758, 815, 946 cm−1, attributed to optical phononexcitations. The specific electrical resistivities, as well as the temperature dependences of carrier mobility and carrier concentration, were measured over the temperature range of 100–300 K.

Maqola ma’lumotlari
MualliflarTashmetov, M.Yu., Djangabaev, Kh.N., Abdaminov, A.B., Ismatov, N.B., Madiyarov, D.N., Ismailov, K.A., Tolbanov, O.P.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2026-05-08
Jild28
Son1
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v28i1.640
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v28i1.640 · Maqolaning asl sahifasi

Kalit so‘zlar

GaAs(O):Cr, комбинационное рассеяние света, инфракрасная спектроскопия, подвижность, концентрация носителей, GaAs(O):Cr, Raman scattering, infrared spectroscopy, carrier mobility, carrier concentration

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APATashmetov, M.Yu., Djangabaev, Kh.N., Abdaminov, A.B., Ismatov, N.B., Madiyarov, D.N., Ismailov, K.A., & Tolbanov, O.P. (2026). Optical and electrophysical properties of GaAs(O):Cr. O‘zbekiston fizika jurnali, 28(1). https://doi.org/10.52304/.v28i1.640
GOST (OAK)Tashmetov, M.Yu. va b. Optical and electrophysical properties of GaAs(O):Cr // O‘zbekiston fizika jurnali. – 2026. – T. 28, № 1. – DOI: 10.52304/.v28i1.640.
MLATashmetov, M.Yu., Djangabaev, Kh.N., Abdaminov, A.B., Ismatov, N.B., Madiyarov, D.N., Ismailov, K.A., and Tolbanov, O.P. “Optical and electrophysical properties of GaAs(O):Cr.” O‘zbekiston fizika jurnali, 28(1), 2026. https://doi.org/10.52304/.v28i1.640
ChicagoTashmetov, M.Yu., Djangabaev, Kh.N., Abdaminov, A.B., Ismatov, N.B., Madiyarov, D.N., Ismailov, K.A., and Tolbanov, O.P. “Optical and electrophysical properties of GaAs(O):Cr.” O‘zbekiston fizika jurnali, 28(1) (2026). https://doi.org/10.52304/.v28i1.640
HarvardTashmetov, M.Yu., Djangabaev, Kh.N., Abdaminov, A.B., Ismatov, N.B., Madiyarov, D.N., Ismailov, K.A., and Tolbanov, O.P (2026) ‘Optical and electrophysical properties of GaAs(O):Cr’, O‘zbekiston fizika jurnali, 28(1). https://doi.org/10.52304/.v28i1.640
BibTeX
@article{tashmetovmyu2026,
  title = {Optical and electrophysical properties of GaAs(O):Cr},
  author = {Tashmetov, M.Yu. and Djangabaev, Kh.N. and Abdaminov, A.B. and Ismatov, N.B. and Madiyarov, D.N. and Ismailov, K.A. and Tolbanov, O.P.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2026},
  volume = {28},
  number = {1},
  doi = {10.52304/.v28i1.640},
  url = {https://doi.org/10.52304/.v28i1.640}
}

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