Optical and electrophysical properties of GaAs(O):Cr

Tashmetov, M.Yu., Djangabaev, Kh.N., Abdaminov, A.B., Ismatov, N.B., Madiyarov, D.N., Ismailov, K.A., Tolbanov, O.P.

O‘zbekiston fizika jurnali · 2026-yil

Annotatsiya

The elemental composition of GaAs(O):Cr was determined using energy-dispersive spectroscopy and found to be: gallium 47.71 at.%, arsenic 44.37 at.%, chromium 0.10 at.%, and oxygen 7.82 at.%. The material was found to possess a cubic crystal structure (space group F43m) with a lattice parameter of a = 5.6538 Å and an average crystallite size of 44.24 nm. Raman spectroscopy revealed peaks at 159, 196, 252, 277, 328, 349, 411, 500 cm−1, corresponding to phonon modes in GaAs(O):Cr and their modifications due to the presence of oxygen andchromium dopants. These observations indicate that doping has a significant effect on the vibrational properties of the crystal lattice. Fourier-transform infrared spectroscopy identified local vibrational modes at 578, 620, 717, 733, 758, 815, 946 cm−1, attributed to optical phononexcitations. The specific electrical resistivities, as well as the temperature dependences of carrier mobility and carrier concentration, were measured over the temperature range of 100–300 K.

Maqola ma’lumotlari
MualliflarTashmetov, M.Yu., Djangabaev, Kh.N., Abdaminov, A.B., Ismatov, N.B., Madiyarov, D.N., Ismailov, K.A., Tolbanov, O.P.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2026-05-08
Jild28
Son1
TilIngliz
DOI10.52304/.v28i1.640

Kalit so‘zlar

GaAs(O):Cr, комбинационное рассеяние света, инфракрасная спектроскопия, подвижность, концентрация носителей, GaAs(O):Cr, Raman scattering, infrared spectroscopy, carrier mobility, carrier concentration

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