Preparation of nano-sized hidden layers of silicides in near-surface region of Si single crystals and study their composition, structure and parameters of energy zones

Исаханов, З.А., Умирзаков, Б.Е., Махмудов, М.А., Махмудов, М.М., Мустафоева, Н.М., Кимизбаева, А.Э.

O‘zbekiston fizika jurnali · 2025-yil

Annotatsiya

Nanocrystalline hidden layers of CsSi2 and NiSi2 at different depths of the near-surface region of Si were obtained by ion implantation method and subsequent annealing. Thickness and depth of formation, crystal structures and bandgaps of the hidden layers have been evaluated using the Auger electron spectroscopy method combined with surface etching with Ar+ ions, fast electron diffraction and UV spectroscopy. The influence of the formation of hidden layer on the crystal structure of the Si surface has been studied. Results showed that in the case of the Si/NiSi2/Si(111) system, epitaxial growth of the surface occurs, while in the case of Si/CsSi2/Si(111) such growth was not observed.

Maqola ma’lumotlari
MualliflarИсаханов, З.А., Умирзаков, Б.Е., Махмудов, М.А., Махмудов, М.М., Мустафоева, Н.М., Кимизбаева, А.Э.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2025-01-21
Jild26
Son4
TilRus
DOI10.52304/.v26i4.575

Kalit so‘zlar

наноразмерные скрытые слои, нанопленки, ионная имплантация, концентрация атомов, взаимодиффузия, переходные слои, поглощение света, профили распределения, прогрев, nanoscale hidden layers, nanofilms, ion implantation, distribution profiles, heating, atomic concentration, interdiffusion, transition layers, light absorptions

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