Nanocrystalline hidden layers of CsSi2 and NiSi2 at different depths of the near-surface region of Si were obtained by ion implantation method and subsequent annealing. Thickness and depth of formation, crystal structures and bandgaps of the hidden layers have been evaluated using the Auger electron spectroscopy method combined with surface etching with Ar+ ions, fast electron diffraction and UV spectroscopy. The influence of the formation of hidden layer on the crystal structure of the Si surface has been studied. Results showed that in the case of the Si/NiSi2/Si(111) system, epitaxial growth of the surface occurs, while in the case of Si/CsSi2/Si(111) such growth was not observed.
| Mualliflar | Исаханов, З.А., Умирзаков, Б.Е., Махмудов, М.А., Махмудов, М.М., Мустафоева, Н.М., Кимизбаева, А.Э. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2025-01-21 |
| Jild | 26 |
| Son | 4 |
| Til | Rus |
| DOI | 10.52304/.v26i4.575 |
DOI: 10.52304/.v26i4.575 · Maqolaning asl sahifasi
наноразмерные скрытые слои, нанопленки, ионная имплантация, концентрация атомов, взаимодиффузия, переходные слои, поглощение света, профили распределения, прогрев, nanoscale hidden layers, nanofilms, ion implantation, distribution profiles, heating, atomic concentration, interdiffusion, transition layers, light absorptions
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