Effect of low-energy implantation of In+ ions on the composition and electronic structure of single crystal GaP (111)

Ширинов, Г.М.

O‘zbekiston fizika jurnali · 2025-yil

Annotatsiya

plantation of In+ ions with energy E0 = 1 keV at different doses and subsequent annealing on the composition, electronic and crystal structure of the GaP(111) surface were studied. It is shown that nanocrystalline phases Ga0,6In0,4P are formed after heating in the dose range D ≈ 5×1014−5×1015 cм−2 with surface dimensions d ≈ 10−30 nm, and at D ≥ 6×1016 cм−2 nanofilm - Ga0,6In0,4P with a thickness of 30−35 nm. It was found that the band gap of the nanophases Eg ≈ 2 − 2.3 eV is significantly larger than the film (~1.85 eV). Information on the electron density of the valence band of nanophases and GaInP nanofilms has been obtained for the first time.

Maqola ma’lumotlari
MualliflarШиринов, Г.М.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2025-01-21
Jild26
Son4
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v26i4.576
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v26i4.576 · Maqolaning asl sahifasi

Kalit so‘zlar

ионная имплантация, профиль распределения, оже-спектр, фотоэлектроны, нанофаза, нанопленка, квантово-размерный эффект, ширина запрещенной зоны, ion implantation, distribution profile, auger-spectrum, photoelectrons, nanophases, nanofilm, quantum-dimensional effect, band GaP

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAШиринов, Г.М. (2025). Effect of low-energy implantation of In+ ions on the composition and electronic structure of single crystal GaP (111). O‘zbekiston fizika jurnali, 26(4). https://doi.org/10.52304/.v26i4.576
GOST (OAK)Ширинов, Г.М. Effect of low-energy implantation of In+ ions on the composition and electronic structure of single crystal GaP (111) // O‘zbekiston fizika jurnali. – 2025. – T. 26, № 4. – DOI: 10.52304/.v26i4.576.
MLAШиринов, Г.М. “Effect of low-energy implantation of In+ ions on the composition and electronic structure of single crystal GaP (111).” O‘zbekiston fizika jurnali, 26(4), 2025. https://doi.org/10.52304/.v26i4.576
ChicagoШиринов, Г.М. “Effect of low-energy implantation of In+ ions on the composition and electronic structure of single crystal GaP (111).” O‘zbekiston fizika jurnali, 26(4) (2025). https://doi.org/10.52304/.v26i4.576
HarvardШиринов, Г.М (2025) ‘Effect of low-energy implantation of In+ ions on the composition and electronic structure of single crystal GaP (111)’, O‘zbekiston fizika jurnali, 26(4). https://doi.org/10.52304/.v26i4.576
BibTeX
@article{article2025,
  title = {Effect of low-energy implantation of In+ ions on the composition and electronic structure of single crystal GaP (111)},
  author = {Ширинов, Г.М.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2025},
  volume = {26},
  number = {4},
  doi = {10.52304/.v26i4.576},
  url = {https://doi.org/10.52304/.v26i4.576}
}

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