The criteria are established that identify the sets of electro-physical and design parameters for diode temperature sensors (DTSs) that achieve either the maximum extent of the temperature response curve (TRC) or the highest sensitivity of the DTSs. A novel method for selfconsistent device optimization is introduced within the context of a model for diffusion current flow through a sharp asymmetric р-n junction, where the ideality factor is presumed to be 1. For Si based DTSs with n+-p and p+-n junctions, the ultimate TRCs and temperature sensitivities have been determined. The experimentally obtained metrological characteristics of DTSs are within the boundaries defined by the limiting characteristics.
| Mualliflar | Истамов, Д.Б., Абдулхаев, О.А., Хакимов, А.А., Аллокулов, К.Н., Ёдгорова, Д.М., Рахматов, А.З. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2025-01-21 |
| Jild | 26 |
| Son | 4 |
| Til | Rus |
| DOI | 10.52304/.v26i4.577 |
DOI: 10.52304/.v26i4.577 · Maqolaning asl sahifasi
диодный датчик температуры, кремний, кривая температурного отклика, чувствительность, р-n переход, diode temperature sensor, silicon, temperature response curve, sensitivity, р-n junction
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