The criteria are established that identify the sets of electro-physical and design parameters for diode temperature sensors (DTSs) that achieve either the maximum extent of the temperature response curve (TRC) or the highest sensitivity of the DTSs. A novel method for selfconsistent device optimization is introduced within the context of a model for diffusion current flow through a sharp asymmetric р-n junction, where the ideality factor is presumed to be 1. For Si based DTSs with n+-p and p+-n junctions, the ultimate TRCs and temperature sensitivities have been determined. The experimentally obtained metrological characteristics of DTSs are within the boundaries defined by the limiting characteristics.
| Mualliflar | Истамов, Д.Б., Абдулхаев, О.А., Хакимов, А.А., Аллокулов, К.Н., Ёдгорова, Д.М., Рахматов, А.З. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2025-01-21 |
| Jild | 26 |
| Son | 4 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v26i4.577 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v26i4.577 · Maqolaning asl sahifasi
диодный датчик температуры, кремний, кривая температурного отклика, чувствительность, р-n переход, diode temperature sensor, silicon, temperature response curve, sensitivity, р-n junction
| APA | Истамов, Д.Б., Абдулхаев, О.А., Хакимов, А.А., Аллокулов, К.Н., Ёдгорова, Д.М., & Рахматов, А.З. (2025). Limit characteristics of silicon diodes temperature sensors. O‘zbekiston fizika jurnali, 26(4). https://doi.org/10.52304/.v26i4.577 |
|---|---|
| GOST (OAK) | Истамов, Д.Б. va b. Limit characteristics of silicon diodes temperature sensors // O‘zbekiston fizika jurnali. – 2025. – T. 26, № 4. – DOI: 10.52304/.v26i4.577. |
| MLA | Истамов, Д.Б., Абдулхаев, О.А., Хакимов, А.А., Аллокулов, К.Н., Ёдгорова, Д.М., and Рахматов, А.З. “Limit characteristics of silicon diodes temperature sensors.” O‘zbekiston fizika jurnali, 26(4), 2025. https://doi.org/10.52304/.v26i4.577 |
| Chicago | Истамов, Д.Б., Абдулхаев, О.А., Хакимов, А.А., Аллокулов, К.Н., Ёдгорова, Д.М., and Рахматов, А.З. “Limit characteristics of silicon diodes temperature sensors.” O‘zbekiston fizika jurnali, 26(4) (2025). https://doi.org/10.52304/.v26i4.577 |
| Harvard | Истамов, Д.Б., Абдулхаев, О.А., Хакимов, А.А., Аллокулов, К.Н., Ёдгорова, Д.М., and Рахматов, А.З (2025) ‘Limit characteristics of silicon diodes temperature sensors’, O‘zbekiston fizika jurnali, 26(4). https://doi.org/10.52304/.v26i4.577 |
| BibTeX | @article{article2025,
title = {Limit characteristics of silicon diodes temperature sensors},
author = {Истамов, Д.Б. and Абдулхаев, О.А. and Хакимов, А.А. and Аллокулов, К.Н. and Ёдгорова, Д.М. and Рахматов, А.З.},
journal = {O‘zbekiston fizika jurnali},
year = {2025},
volume = {26},
number = {4},
doi = {10.52304/.v26i4.577},
url = {https://doi.org/10.52304/.v26i4.577}
} |
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