- EXPONENTIAL ABSORPTION SPECTRUM AND DENSITY DISTRIBUTION OF ELECTRONIC STATES ON THE TAIL OF THE VALENCE ZONE OF AMORPHOUS SEMICONDUCTORS
O.O. Mamatkarimov, Р. Г. Икрамов, B.H. Kuchkarov, Kh.A. Muminov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
The analytical expression of the spectrum, derived for the region of exponential absorption of amorphous semiconductors, is investi gated. The parameters in this expression that determine the slope of the tails of the…
- THEORETICAL PREDICTIONS AND PREP ARATION OF SEMICONDUCTOR SOLIDS BASED ON A STATISTICAL GENERALIZED MOMENT
N.Z. Khakimov, A.Sh. Razzokov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
The article presents an analytical formula, theoretical results and calculations of statistically generalized moments of the elements of Mendeleev's peri odic table. For the elements of the periodic table, the results…
- IMPROVEMENT OF OPTICAL PROPER TIES OF HIGH VOLTAGE MATRIX PHOTOELECTRIC DEVICES
S.S. Nasriddinov, O.F. Tukfatullin, M.A. Muydinova, M. Fozilova · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
n this paper a new design of a silicon high-v oltage matrix photovoltaic device with vertical heterojunctions with the Si/ZnO structur e was considered, the optical properties of which are improved
- SIMULATION OF POTENTIAL DISTRIBUTIONS IN THE SPACE CHARGE REGION OF SEMICONDUCTOR STRUCTURES
nstitute of Semiconductor Physics and Microelectronics of NUUz Tashkent, Uzbekistan, Sharifa B. Utamuradova, E.M. Naurzalieva · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
The methods of description of semiconduc tor-insulator interface characteristics based on process change of MIS type structure was considered. By using Maple Software, the calculations of quantities of inversion layer…
- MANUFACTURING TECHNOLOGY FOR TWO-COORDINATE SENSITIVE SEMICONDUCTOR DETECTORS BASED ON LARGE-DIAMETER SINGLE-CRYSTAL SILICON
R.A. Muminov, A.K. Saymbetov, Y.Q. Toshmurodov, M.O. Yavqochliyev · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
The article presents the main results o f the manufacturing technology o f Si(Li) two- coordinate sensitive nuclear radiation detectors based on single-crystal silicon with the dimensions o f the numerical region 50*50…
- INJECTION DIFFUSION PROCESSES IN THE WEAK LINEAR GRADED-BAND SEMICONDUCTOR ^-«-STRUCTURES
A. Yu. Leĭderman, А. С. Саидов, Sh. N. Usmonov, J. M. Abdiyev · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
Processes o f current transport in p-n- structure obtained on the base o f linear graded-band semiconductor are researched. Principal equation at conditions o f quasielectricalfields for electrons and holes was…
- DISTRIBUTION OF IMPURITY ATOMS BY THE VOLUME OF MICROINCUTIONS IN SAMPLES n-Si
S.Z. Zainabidinov, N. A. Turgunov, Sh. Akbarov, E.Kh. Berkinov, D.Kh. Mamazhonova · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
The paper considers the structural structure o f nickel impurity microinclusions in silicon, form ed during diffusion alloying at a temperature o f T = 1523 K. Using microprobe analysis, images o f nickel impurity…
- CYCLOTRON TRANSITIONS AND ELECTRON MASS IN A WIDE INAS QUANTUM WELL IN STRONG MAGNETIC FIELDS
G. Gulyamov, P.J. Baymatov, B. T. Abdulazizov, M.S. Tokhirjonov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
The two-band model is used to calculate the cyclotron mass o f an electron in an InAs quantum well. The calculations were performed in the approximation o f infinity o f the depth o f the quantum well, taking into…
- EFFECT OF у- IRRADIATION ON THE OPTICAL PROPERTIES OF ZnSe/ZnCdSe QUANTUM-DIMENSIONAL STRUCTURES
M.B. Sharibaev, Q.A. Ismailov, I.N. Karimov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
In this paper, we studied the effect o f Co60 gamma-ray irradiation on the optical characteristics o f single and several compressed-stressed CdxZm-xSe/ZnSe QCS with the composition x=0.2-0.4 grown by molecular beam…
- EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR
Sh.Kh. Daliev, F.A. Saparov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the…
- Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si
SRI OF PHYSICS OF SEMICONDUCTORS AND MICROELECTRONICS AT NUUZ named after MIRZO ULUGBEK, Ш.Б. Утамурадова, Ж.Ж. Ҳамдамов, Д.А. Рахманов · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-12-30
Effect of Holmium Impurity on the Processes of Radiation Defect Formation in n-Si
- ELECTROPHYSICAL PARAMETERS OF p-i-n -PHOTODIODES
V.B. Odzhaev, A.N. Petlitsky, V.S. Prosolovich, V. A. Filipenya, D. V. Shestovsky, V.Yu. Yavid, Yu. N. Yankovsky, G. Kh. Mavlyanov, B.K. Ismaylov, Z.T Kenzhaev · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-04-30
t was found in the work that for p-and- n-photodiodes on the reverse branch current- voltage characteristic, steps are observed in the region of voltages of 25 and 70 V due to the terminology-intensive procedure for…
- SIMULATION OF THE TEMPERATURE DEPENDENCE OF THE QUANTUM OSCILLATIONS’ EFFECTS IN 2D SEMICONDUCTOR MATERIALS
У. И. Эркабоев, R. G. Rakhimov, N. A. Sayidov, U.M. Negmatov · (2019) Яримўтказгичлар физикаси ва микроэлектроника журнали · 2021-02-28
For the first time, a mathematical model was developed for determining the effect o f temperature and a quantizing magnetic field on oscillations o f the Fermi energy in nanoscale semiconductor structures with a…