Structural features of a Si29H36 silicon cluster with a vacancy doped with O and C impurity atoms

Махкамов, Ш.М., Сулайманов, Н.Т., Нормуродов, А.Б., Эрдонов, М.Н., Эгамов, С.

O‘zbekiston fizika jurnali · 2024-yil

Annotatsiya

Using the method of computer simulation based on the density functional theory, the influence of vacancy on the structures of silicon clusters Si29H36 and Si29VH36 are calculated. It is shown that the simultaneous introduction of O and C atoms into the central coordination sphere of the cluster Si29H36 leads to formation of the Оi-Si-Сi complex. In the cluster with vacancy, the complexes 3H+C+Si and Si-O-V are formed.

Maqola ma’lumotlari
MualliflarМахкамов, Ш.М., Сулайманов, Н.Т., Нормуродов, А.Б., Эрдонов, М.Н., Эгамов, С.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2024-01-17
Jild25
Son4
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v25i4.481
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v25i4.481 · Maqolaning asl sahifasi

Kalit so‘zlar

компьютерное моделирование, нанокластер кремния, структура, внедрение примесей, silicon nanocluster, computer simulation, introduction of impurities

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAМахкамов, Ш.М., Сулайманов, Н.Т., Нормуродов, А.Б., Эрдонов, М.Н., & Эгамов, С. (2024). Structural features of a Si29H36 silicon cluster with a vacancy doped with O and C impurity atoms. O‘zbekiston fizika jurnali, 25(4). https://doi.org/10.52304/.v25i4.481
GOST (OAK)Махкамов, Ш.М. va b. Structural features of a Si29H36 silicon cluster with a vacancy doped with O and C impurity atoms // O‘zbekiston fizika jurnali. – 2024. – T. 25, № 4. – DOI: 10.52304/.v25i4.481.
MLAМахкамов, Ш.М., Сулайманов, Н.Т., Нормуродов, А.Б., Эрдонов, М.Н., and Эгамов, С. “Structural features of a Si29H36 silicon cluster with a vacancy doped with O and C impurity atoms.” O‘zbekiston fizika jurnali, 25(4), 2024. https://doi.org/10.52304/.v25i4.481
ChicagoМахкамов, Ш.М., Сулайманов, Н.Т., Нормуродов, А.Б., Эрдонов, М.Н., and Эгамов, С. “Structural features of a Si29H36 silicon cluster with a vacancy doped with O and C impurity atoms.” O‘zbekiston fizika jurnali, 25(4) (2024). https://doi.org/10.52304/.v25i4.481
HarvardМахкамов, Ш.М., Сулайманов, Н.Т., Нормуродов, А.Б., Эрдонов, М.Н., and Эгамов, С (2024) ‘Structural features of a Si29H36 silicon cluster with a vacancy doped with O and C impurity atoms’, O‘zbekiston fizika jurnali, 25(4). https://doi.org/10.52304/.v25i4.481
BibTeX
@article{article2024,
  title = {Structural features of a Si29H36 silicon cluster with a vacancy doped with O and C impurity atoms},
  author = {Махкамов, Ш.М. and Сулайманов, Н.Т. and Нормуродов, А.Б. and Эрдонов, М.Н. and Эгамов, С.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2024},
  volume = {25},
  number = {4},
  doi = {10.52304/.v25i4.481},
  url = {https://doi.org/10.52304/.v25i4.481}
}

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