Structural features of a Si29H36 silicon cluster with a vacancy doped with O and C impurity atoms

Махкамов, Ш.М., Сулайманов, Н.Т., Нормуродов, А.Б., Эрдонов, М.Н., Эгамов, С.

O‘zbekiston fizika jurnali · 2024-yil

Annotatsiya

Using the method of computer simulation based on the density functional theory, the influence of vacancy on the structures of silicon clusters Si29H36 and Si29VH36 are calculated. It is shown that the simultaneous introduction of O and C atoms into the central coordination sphere of the cluster Si29H36 leads to formation of the Оi-Si-Сi complex. In the cluster with vacancy, the complexes 3H+C+Si and Si-O-V are formed.

Maqola ma’lumotlari
MualliflarМахкамов, Ш.М., Сулайманов, Н.Т., Нормуродов, А.Б., Эрдонов, М.Н., Эгамов, С.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2024-01-17
Jild25
Son4
TilRus
DOI10.52304/.v25i4.481

Kalit so‘zlar

компьютерное моделирование, нанокластер кремния, структура, внедрение примесей, silicon nanocluster, computer simulation, introduction of impurities

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