The macroporous silicon substrate was obtained through electrochemical etching and exhibited a uniform distribution of pores. For the deposition of the TiO2 film onto substrate, the thermal atomic layer deposition (ALD) method was applied, and the process characteristics were examined and optimized. The research were substantiated through spectral ellipsometry, scanning electron microscopy, and elemental analysis using SEM EDS. This studies showed the efficiency of the ALD method in achieving the homogeneous deposition of thin TiO2 films onto macroporous silicon substrates.
| Mualliflar | Турдалиев, Т.К., Ашуров, Р.Х., Зохидов, Х.Х. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2023-10-07 |
| Jild | 25 |
| Son | 3 |
| Til | Rus |
| DOI | 10.52304/.v25i3.456 |
DOI: 10.52304/.v25i3.456 · Maqolaning asl sahifasi
тонкая пленка, оксид титана, макропористый кремний, атомно-слоевое осаждение, сканирующая электронная микроскопия, спектральная эллипсометрия, thin film, titanium dioxide, macroporous silicon, atomic layer deposition, scanning electron microscopy, spectral ellipsometry
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