The growth of oxide layers of various dielectrics on the silicon surface is carried out at high temperatures (1150-1200) Celsius in an atmosphere of dry oxygen O2. The color of the coating is determined by its thickness and refractive index. When observing light reflected at right angles (perpendicular light), taking into account the fact that the refractive index of SiO2 is 1.46, the color shades of the coating are repeated across the entire spectrum from violet to dark red after 160-240 nm. SiO2 shows a significant statistical spread of breakdown voltage values (from 15 V to 190 V and above). The band gap using the law of reflection (HR-4000) is in the range from 1.14 to 2.36 eV. Studies on IRTracer-100 indicate the formation of a chemical bond between Si-O. Calculations have shown that the field strength sufficient for electrical breakdown of silicon dioxide is in the range of 5 10 5-5 10 6 V/cm.
| Mualliflar | Игамов, Б.Д., Камардин, А.И., Бекпулатов, И.Р. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2024-01-17 |
| Jild | 25 |
| Son | 4 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v25i4.469 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v25i4.469 · Maqolaning asl sahifasi
термическое оксидирование, тонкое покрытие, ширина запрещенной зоны, термический отжиг, электрическое поле, отражение света, thermal oxidation, thin coating, band gap, thermal annealing, electric field, light reflection
| APA | Игамов, Б.Д., Камардин, А.И., & Бекпулатов, И.Р. (2024). Formation of dielectric substrates for magnetron deposition of silicide coatings. O‘zbekiston fizika jurnali, 25(4). https://doi.org/10.52304/.v25i4.469 |
|---|---|
| GOST (OAK) | Игамов, Б.Д., Камардин, А.И., Бекпулатов, И.Р. Formation of dielectric substrates for magnetron deposition of silicide coatings // O‘zbekiston fizika jurnali. – 2024. – T. 25, № 4. – DOI: 10.52304/.v25i4.469. |
| MLA | Игамов, Б.Д., Камардин, А.И., and Бекпулатов, И.Р. “Formation of dielectric substrates for magnetron deposition of silicide coatings.” O‘zbekiston fizika jurnali, 25(4), 2024. https://doi.org/10.52304/.v25i4.469 |
| Chicago | Игамов, Б.Д., Камардин, А.И., and Бекпулатов, И.Р. “Formation of dielectric substrates for magnetron deposition of silicide coatings.” O‘zbekiston fizika jurnali, 25(4) (2024). https://doi.org/10.52304/.v25i4.469 |
| Harvard | Игамов, Б.Д., Камардин, А.И., and Бекпулатов, И.Р (2024) ‘Formation of dielectric substrates for magnetron deposition of silicide coatings’, O‘zbekiston fizika jurnali, 25(4). https://doi.org/10.52304/.v25i4.469 |
| BibTeX | @article{article2024,
title = {Formation of dielectric substrates for magnetron deposition of silicide coatings},
author = {Игамов, Б.Д. and Камардин, А.И. and Бекпулатов, И.Р.},
journal = {O‘zbekiston fizika jurnali},
year = {2024},
volume = {25},
number = {4},
doi = {10.52304/.v25i4.469},
url = {https://doi.org/10.52304/.v25i4.469}
} |
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