The paper presents the results of studying the nature of the electron energy levels in a quantum well of heterostructures AlAs/InxGa1-xAs/AlAs containing a thin InAs nanolayer. The dependences of these energy levels on the thickness En(b) of the InAs layer are analyzed by numerical and analytical methods. An analytical formula for the dependence En(b) is obtained in the model of an infinitely deep well. The dependence of the energy levels on the thickness b of the InAs nanolayer found in the model of parabolic bands turned out to be strong and complex. In the model of nonparabolic bands, due to the growth of the electron mass with respect to energy, the number of energy levels in the well increased, and the En(b) dependences were noticeably suppressed. The nature and causes of these regularities are analyzed.
| Mualliflar | Байматов, П.Ж., Абдулазизов, Б.Т., Тохиржонов, М.С. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2024-01-17 |
| Jild | 25 |
| Son | 4 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v25i4.474 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v25i4.474 · Maqolaning asl sahifasi
квантовая яма, пространственное квантование, AlAs/InXGа1-xAs/AlAs, нанослой InAs, непараболичная дисперсия, модель Кейна, двухбарьерная структура, резонансно-туннельный диод, резонансно-туннельный транзистор, quantum well, size quantization nanolayer InAs, AlAs/InxGa1-xAs/AlAs, nonparabolic dispersion, Kane model, two-barrier structure, resonance-tunnel diode, resonance-tunnel transistor
| APA | Байматов, П.Ж., Абдулазизов, Б.Т., & Тохиржонов, М.С. (2024). Effect of a thin InAs layer on the electron energy in the quantum well of AlAs/InxGa1-xAs/AlAs heterostructures. O‘zbekiston fizika jurnali, 25(4). https://doi.org/10.52304/.v25i4.474 |
|---|---|
| GOST (OAK) | Байматов, П.Ж., Абдулазизов, Б.Т., Тохиржонов, М.С. Effect of a thin InAs layer on the electron energy in the quantum well of AlAs/InxGa1-xAs/AlAs heterostructures // O‘zbekiston fizika jurnali. – 2024. – T. 25, № 4. – DOI: 10.52304/.v25i4.474. |
| MLA | Байматов, П.Ж., Абдулазизов, Б.Т., and Тохиржонов, М.С. “Effect of a thin InAs layer on the electron energy in the quantum well of AlAs/InxGa1-xAs/AlAs heterostructures.” O‘zbekiston fizika jurnali, 25(4), 2024. https://doi.org/10.52304/.v25i4.474 |
| Chicago | Байматов, П.Ж., Абдулазизов, Б.Т., and Тохиржонов, М.С. “Effect of a thin InAs layer on the electron energy in the quantum well of AlAs/InxGa1-xAs/AlAs heterostructures.” O‘zbekiston fizika jurnali, 25(4) (2024). https://doi.org/10.52304/.v25i4.474 |
| Harvard | Байматов, П.Ж., Абдулазизов, Б.Т., and Тохиржонов, М.С (2024) ‘Effect of a thin InAs layer on the electron energy in the quantum well of AlAs/InxGa1-xAs/AlAs heterostructures’, O‘zbekiston fizika jurnali, 25(4). https://doi.org/10.52304/.v25i4.474 |
| BibTeX | @article{article2024,
title = {Effect of a thin InAs layer on the electron energy in the quantum well of AlAs/InxGa1-xAs/AlAs heterostructures},
author = {Байматов, П.Ж. and Абдулазизов, Б.Т. and Тохиржонов, М.С.},
journal = {O‘zbekiston fizika jurnali},
year = {2024},
volume = {25},
number = {4},
doi = {10.52304/.v25i4.474},
url = {https://doi.org/10.52304/.v25i4.474}
} |
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