The influence of the impurity of erbium, lanthanum and oxygen on the processes of formation of radiation defects in silicon was studied by method of deep level transient spectroscopy. It is established that the presence of erbium or lanthanum impurities in Si leads to a decrease in the efficiency of formation of radiation defects. It is shown that the concentrations of both A-centers and E-centers are 4-5 times lower in n-Si<Er>or n-Si<La> irradiated with γ-quanta 60Co compared to the control irradiated samples. It was found that the efficiency of the formation of radiation defects depends on the oxygen content in silicon.
| Mualliflar | Далиев, Ш.Х., Мамадалимов, А.Т., Бекмуратов, М.Б. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-08-21 |
| Jild | 21 |
| Son | 4 |
| Betlar | 267-269 |
| Til | Rus |
| DOI | 10.52304/.v21i4.117 |
DOI: 10.52304/.v21i4.117 · Maqolaning asl sahifasi
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