Effect of erbium, lanthanum atoms and growth impurities on the efficiency of radiation defects formation in silicon

Далиев, Ш.Х., Мамадалимов, А.Т., Бекмуратов, М.Б.

O‘zbekiston fizika jurnali · 2019-yil

Annotatsiya

The influence of the impurity of erbium, lanthanum and oxygen on the processes of formation of radiation defects in silicon was studied by method of deep level transient spectroscopy. It is established that the presence of erbium or lanthanum impurities in Si leads to a decrease in the efficiency of formation of radiation defects. It is shown that the concentrations of both A-centers and E-centers are 4-5 times lower in n-Si<Er>or n-Si<La> irradiated with γ-quanta 60Co compared to the control irradiated samples. It was found that the efficiency of the formation of radiation defects depends on the oxygen content in silicon.

Maqola ma’lumotlari
MualliflarДалиев, Ш.Х., Мамадалимов, А.Т., Бекмуратов, М.Б.
JurnalO‘zbekiston fizika jurnali
NashriyotЎзбекистон Республикаси Фанлар академияси
ISSN1025-8817, 2181-077X
Nashr sanasi2019-08-21
Jild21
Son4
Betlar267-269
TilIngliz
Ilmiy sohaFizika-matematika
DOI10.52304/.v21i4.117
Indeksga qo‘shilgan2026-08-26

DOI: 10.52304/.v21i4.117 · Maqolaning asl sahifasi

Ilmiy soha

Fizika-matematika

Iqtibos keltirish

APAДалиев, Ш.Х., Мамадалимов, А.Т., & Бекмуратов, М.Б. (2019). EFFECT OF ERBIUM, LANTHANUM ATOMS AND GROWTH IMPURITIES ON THE EFFICIENCY OF RADIATION DEFECTS FORMATION IN SILICON. O‘zbekiston fizika jurnali, 21(4), 267-269. https://doi.org/10.52304/.v21i4.117
GOST (OAK)Далиев, Ш.Х., Мамадалимов, А.Т., Бекмуратов, М.Б. EFFECT OF ERBIUM, LANTHANUM ATOMS AND GROWTH IMPURITIES ON THE EFFICIENCY OF RADIATION DEFECTS FORMATION IN SILICON // O‘zbekiston fizika jurnali. – 2019. – T. 21, № 4. – P. 267-269. – DOI: 10.52304/.v21i4.117.
MLAДалиев, Ш.Х., Мамадалимов, А.Т., and Бекмуратов, М.Б. “EFFECT OF ERBIUM, LANTHANUM ATOMS AND GROWTH IMPURITIES ON THE EFFICIENCY OF RADIATION DEFECTS FORMATION IN SILICON.” O‘zbekiston fizika jurnali, 21(4), 267-269, 2019. https://doi.org/10.52304/.v21i4.117
ChicagoДалиев, Ш.Х., Мамадалимов, А.Т., and Бекмуратов, М.Б. “EFFECT OF ERBIUM, LANTHANUM ATOMS AND GROWTH IMPURITIES ON THE EFFICIENCY OF RADIATION DEFECTS FORMATION IN SILICON.” O‘zbekiston fizika jurnali, 21(4), 267-269 (2019). https://doi.org/10.52304/.v21i4.117
HarvardДалиев, Ш.Х., Мамадалимов, А.Т., and Бекмуратов, М.Б (2019) ‘EFFECT OF ERBIUM, LANTHANUM ATOMS AND GROWTH IMPURITIES ON THE EFFICIENCY OF RADIATION DEFECTS FORMATION IN SILICON’, O‘zbekiston fizika jurnali, 21(4), 267-269. https://doi.org/10.52304/.v21i4.117
BibTeX
@article{article2019,
  title = {EFFECT OF ERBIUM, LANTHANUM ATOMS AND GROWTH IMPURITIES ON THE EFFICIENCY OF RADIATION DEFECTS FORMATION IN SILICON},
  author = {Далиев, Ш.Х. and Мамадалимов, А.Т. and Бекмуратов, М.Б.},
  journal = {O‘zbekiston fizika jurnali},
  year = {2019},
  volume = {21},
  number = {4},
  pages = {267-269},
  doi = {10.52304/.v21i4.117},
  url = {https://doi.org/10.52304/.v21i4.117}
}

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