INVESTIGATION OF IMPURITY ELEMENTS AND PROFILES OF THEIR DISTRIBUTION OVER THE DEPTH OF THE Ni-GaP-SnO2 SYSTEM

Абдувайитов, А.А., Болтаев , Х.Х.

O‘zbekiston fizika jurnali · 2018-yil

Annotatsiya

The effect of preliminary temperature heating under high vacuum conditions on the distribution profiles of impurity atoms over the depth of the Ni-GaP-SnO2 (sital) system is studied. It is shown that such heating sharply reduces (up to 2-3 times) the concentration of oxygen and carbon at the Ni-GaP boundary, accordingly, improves the quality of the ohmic contact.

Maqola ma’lumotlari
MualliflarАбдувайитов, А.А., Болтаев , Х.Х.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2018-09-21
Jild20
Son5
Betlar295-299
TilRus
DOI10.52304/.v20i5.120

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