The effect of preliminary temperature heating under high vacuum conditions on the distribution profiles of impurity atoms over the depth of the Ni-GaP-SnO2 (sital) system is studied. It is shown that such heating sharply reduces (up to 2-3 times) the concentration of oxygen and carbon at the Ni-GaP boundary, accordingly, improves the quality of the ohmic contact.
| Mualliflar | Абдувайитов, А.А., Болтаев , Х.Х. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2018-09-21 |
| Jild | 20 |
| Son | 5 |
| Betlar | 295-299 |
| Til | Rus |
| DOI | 10.52304/.v20i5.120 |
DOI: 10.52304/.v20i5.120 · Maqolaning asl sahifasi
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