The processes of formation of thin nanosized films of Ba silicides and alkaline elements during their low-energy and high-dose implantation in Si(111) and Si(100) have been studied using electron spectroscopy, transmission scanning electron microscopy, and diffraction of slow electrons. Optimal technological conditions for the receipt of silicide films are determined. It is shown that the forming films of metal silicides have new superstructures that are different from pure silicon ones. An analysis of the results is given.
| Mualliflar | Рысбаев, А.С., Нормуродов, М.Т., Бекпулатов, И.Р., Рахимов, А.М., Игамов, Б.Д. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2018-05-21 |
| Jild | 20 |
| Son | 3 |
| Betlar | 165-172 |
| Til | Rus |
| DOI | 10.52304/.v20i3.87 |
DOI: 10.52304/.v20i3.87 · Maqolaning asl sahifasi
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