The results of decreasing the epitaxy temperature up to 900−1100 K to produce sufficiently perfect films under vacuum deposition and by ion stimulation have been presented.
| Mualliflar | Абдурахманов, Б.М., Ашуров, М.Х., Ашуров, Х.Б., Каланов, М.У., Кучканов, Ш.К., Кутлимуротов, Б.Р., Максимов, С.Е., Ниматов, С.Ж. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2018-05-21 |
| Jild | 20 |
| Son | 3 |
| Betlar | 158-164 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v20i3.86 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v20i3.86 · Maqolaning asl sahifasi
| APA | Абдурахманов, Б.М., Ашуров, М.Х., Ашуров, Х.Б., Каланов, М.У., Кучканов, Ш.К., Кутлимуротов, Б.Р., Максимов, С.Е., & Ниматов, С.Ж. (2018). SOME CHARACTERISTICS OF SILICON FILM STRUCTURES OBTAINED BY VACUUM DEPOSITION. O‘zbekiston fizika jurnali, 20(3), 158-164. https://doi.org/10.52304/.v20i3.86 |
|---|---|
| GOST (OAK) | Абдурахманов, Б.М. va b. SOME CHARACTERISTICS OF SILICON FILM STRUCTURES OBTAINED BY VACUUM DEPOSITION // O‘zbekiston fizika jurnali. – 2018. – T. 20, № 3. – P. 158-164. – DOI: 10.52304/.v20i3.86. |
| MLA | Абдурахманов, Б.М., Ашуров, М.Х., Ашуров, Х.Б., Каланов, М.У., Кучканов, Ш.К., Кутлимуротов, Б.Р., Максимов, С.Е., and Ниматов, С.Ж. “SOME CHARACTERISTICS OF SILICON FILM STRUCTURES OBTAINED BY VACUUM DEPOSITION.” O‘zbekiston fizika jurnali, 20(3), 158-164, 2018. https://doi.org/10.52304/.v20i3.86 |
| Chicago | Абдурахманов, Б.М., Ашуров, М.Х., Ашуров, Х.Б., Каланов, М.У., Кучканов, Ш.К., Кутлимуротов, Б.Р., Максимов, С.Е., and Ниматов, С.Ж. “SOME CHARACTERISTICS OF SILICON FILM STRUCTURES OBTAINED BY VACUUM DEPOSITION.” O‘zbekiston fizika jurnali, 20(3), 158-164 (2018). https://doi.org/10.52304/.v20i3.86 |
| Harvard | Абдурахманов, Б.М., Ашуров, М.Х., Ашуров, Х.Б., Каланов, М.У., Кучканов, Ш.К., Кутлимуротов, Б.Р., Максимов, С.Е., and Ниматов, С.Ж (2018) ‘SOME CHARACTERISTICS OF SILICON FILM STRUCTURES OBTAINED BY VACUUM DEPOSITION’, O‘zbekiston fizika jurnali, 20(3), 158-164. https://doi.org/10.52304/.v20i3.86 |
| BibTeX | @article{article2018,
title = {SOME CHARACTERISTICS OF SILICON FILM STRUCTURES OBTAINED BY VACUUM DEPOSITION},
author = {Абдурахманов, Б.М. and Ашуров, М.Х. and Ашуров, Х.Б. and Каланов, М.У. and Кучканов, Ш.К. and Кутлимуротов, Б.Р. and Максимов, С.Е. and Ниматов, С.Ж.},
journal = {O‘zbekiston fizika jurnali},
year = {2018},
volume = {20},
number = {3},
pages = {158-164},
doi = {10.52304/.v20i3.86},
url = {https://doi.org/10.52304/.v20i3.86}
} |
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