The effect of ultrasonic action on the density of electronic states localized at the Si-glass interface is studied. A method is proposed for determining the surface and volume generation rates of charge carriers using the calculated time dependence of the space charge region width (SCR) when comparing it with the experimental dependence. Ultrasonic treatment of Al-n-Si-glass-Al structures with a frequency of 2.5 MHz and a power of 0.5 W for 40 min leads to a decrease in the rate of charge formation of the inversion layer. This is due to a decrease in the integral density of electronic states localized at the semiconductor-glass interface, and does not affect the energy spectrum of bulk electronic states in a semiconductor.
| Mualliflar | Кучкаров, Б.X., Маматкаримов, O.O. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2019-10-10 |
| Jild | 22 |
| Son | 5 |
| Betlar | 302-307 |
| Til | Rus |
| DOI | 10.52304/.v22i5.195 |
DOI: 10.52304/.v22i5.195 · Maqolaning asl sahifasi
ультразвуковое облучение, С-V характеристики, локализованные состояния, релаксация, генерация носителей, диэлектрические потери, межфазные границы, изотермическая релаксация емкости., ultrasonic irradiation, C-V characteristics, localized states, relaxation, carrier generation, dielectric losses, interphase boundaries, isothermal relaxation of capacitance.
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