The influence of cluster formation of components during the growth of graded-gap solid solution Si1-xGex from a tin solution-melt

Раззоков, А.Ш., Саидов, А.С., Петрушенко, С.И., Дукаров, С.В., Кошчанова, Д.Э., Отажонова, Р.М.

O‘zbekiston fizika jurnali · 2024-yil

Annotatsiya

Single-crystal films of solid solution Si1-xGex (0<x<1) were grown on Si<111> substrate from atin solution-melt at the temperature in the range of the onset of crystallization Tnc=(800−1050)°С by liquid-phase epitaxy. The perfection of the films obtained, as well as the dependenceof the dislocation density at the substrate-film interface on the number and size ofthe formed nanoclusters in the solution-melt during the growth of the Si1-xGex solid solutionhave been studied by X-ray method. Optimal technological growth modes for obtaining perfectcrystalline epitaxial layers and structures are presented.

Maqola ma’lumotlari
MualliflarРаззоков, А.Ш., Саидов, А.С., Петрушенко, С.И., Дукаров, С.В., Кошчанова, Д.Э., Отажонова, Р.М.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2024-07-05
Jild26
Son2
TilRus
DOI10.52304/.v26i2.522

Kalit so‘zlar

эпитаксия, рентгенодифрактограмма, кристаллизация, варизонный, дислокация, седиментация, epitaxy, X-ray method, crystallization, graded-gap, dislocation, sedimentation

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