Single-crystal films of solid solution Si1-xGex (0<x<1) were grown on Si<111> substrate from atin solution-melt at the temperature in the range of the onset of crystallization Tnc=(800−1050)°С by liquid-phase epitaxy. The perfection of the films obtained, as well as the dependenceof the dislocation density at the substrate-film interface on the number and size ofthe formed nanoclusters in the solution-melt during the growth of the Si1-xGex solid solutionhave been studied by X-ray method. Optimal technological growth modes for obtaining perfectcrystalline epitaxial layers and structures are presented.
| Mualliflar | Раззоков, А.Ш., Саидов, А.С., Петрушенко, С.И., Дукаров, С.В., Кошчанова, Д.Э., Отажонова, Р.М. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2024-07-05 |
| Jild | 26 |
| Son | 2 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v26i2.522 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v26i2.522 · Maqolaning asl sahifasi
эпитаксия, рентгенодифрактограмма, кристаллизация, варизонный, дислокация, седиментация, epitaxy, X-ray method, crystallization, graded-gap, dislocation, sedimentation
| APA | Раззоков, А.Ш., Саидов, А.С., Петрушенко, С.И., Дукаров, С.В., Кошчанова, Д.Э., & Отажонова, Р.М. (2024). The influence of cluster formation of components during the growth of graded-gap solid solution Si1-xGex from a tin solution-melt. O‘zbekiston fizika jurnali, 26(2). https://doi.org/10.52304/.v26i2.522 |
|---|---|
| GOST (OAK) | Раззоков, А.Ш. va b. The influence of cluster formation of components during the growth of graded-gap solid solution Si1-xGex from a tin solution-melt // O‘zbekiston fizika jurnali. – 2024. – T. 26, № 2. – DOI: 10.52304/.v26i2.522. |
| MLA | Раззоков, А.Ш., Саидов, А.С., Петрушенко, С.И., Дукаров, С.В., Кошчанова, Д.Э., and Отажонова, Р.М. “The influence of cluster formation of components during the growth of graded-gap solid solution Si1-xGex from a tin solution-melt.” O‘zbekiston fizika jurnali, 26(2), 2024. https://doi.org/10.52304/.v26i2.522 |
| Chicago | Раззоков, А.Ш., Саидов, А.С., Петрушенко, С.И., Дукаров, С.В., Кошчанова, Д.Э., and Отажонова, Р.М. “The influence of cluster formation of components during the growth of graded-gap solid solution Si1-xGex from a tin solution-melt.” O‘zbekiston fizika jurnali, 26(2) (2024). https://doi.org/10.52304/.v26i2.522 |
| Harvard | Раззоков, А.Ш., Саидов, А.С., Петрушенко, С.И., Дукаров, С.В., Кошчанова, Д.Э., and Отажонова, Р.М (2024) ‘The influence of cluster formation of components during the growth of graded-gap solid solution Si1-xGex from a tin solution-melt’, O‘zbekiston fizika jurnali, 26(2). https://doi.org/10.52304/.v26i2.522 |
| BibTeX | @article{article2024,
title = {The influence of cluster formation of components during the growth of graded-gap solid solution Si1-xGex from a tin solution-melt},
author = {Раззоков, А.Ш. and Саидов, А.С. and Петрушенко, С.И. and Дукаров, С.В. and Кошчанова, Д.Э. and Отажонова, Р.М.},
journal = {O‘zbekiston fizika jurnali},
year = {2024},
volume = {26},
number = {2},
doi = {10.52304/.v26i2.522},
url = {https://doi.org/10.52304/.v26i2.522}
} |
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