This work analyzes the physical mechanisms responsible for non-ideal electrical effects in metal–dielectric–semiconductor (MDS) structures. The study is based on the kinetic properties of charge states located at the interface and in the near-interface dielectric layer. It is shown that external influences modify the local potential landscape near the interface and redistribute charge-exchange kinetics without generating new defects. As a result, the electrical response of MDS structures is governed by the intrinsic kinetic dynamics of interface states.
| Mualliflar | Mamatkarimov, Odiljon Okhundedaevich, Abdulkhayev, Abrorbek Abdulloxonovich, Fazliddinov, Salokhiddin Bakhriddinovich, Quchqarov, Behzod Hoshimjonovich, Маматкаримов, Одилжон Охундедаевич, Абдулхаев, Аброрбек Абдуллохонович, Фазлиддинов, Салохиддин Бахриддинович, Кучкаров, Бехзод Хошимжонович, Mamatkarimov, Odiljon Oxundedayevich, Abdulxayev, Abrorbek Abdulloxon oʻgʻli, Fazliddinov, Salohiddin Bahriddin oʻgʻli, Quchqarov, Behzod Hoshimjonovich |
|---|---|
| Jurnal | Ilim ha’m ja’miyet |
| Nashr sanasi | 2026-05-16 |
| Son | 3-1 |
| Betlar | 21-23 |
| Til | uz_Latn |
metall–dielektrik–yarimo‘tkazgich tuzilmalari, interfeys holatlari, zaryad tutib qoluvchi holatlar, sig‘im–kuchlanish gisterezisi, tekis-tasma kuchlanishi, zaryad relaksatsiyasi, aktivatsiya energiyasi, zaryad almashinuvi kinetikasi, lokal potentsial relyef, interfeys holatlarining qayta konfiguratsiyasi, структуры металл–диэлектрик–полупроводник, интерфейсные состояния, ловушки заряда, гистерезис ёмкость–напряжение, напряжение плоских зон, релаксация заряда, энергия активации, кинетика обмена зарядом, локальный потенциальный рельеф, реконфигурация интерфейсных состояний, metal-dielectric–semiconductor structures, interface states, charge trapping states, capacitance–voltage hysteresis, flat-band voltage, charge relaxation, activation energy, charge exchange kinetics, local potential landscape, reconfiguration of interface states
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