The article is devoted to the presentation and discussion of the primary results of an experimental study of the possibility of using the modern "transient photoconductance method" and "noncontact quasi-steady state photoconductivity method" for a more accurate, accelerated and nondestructive determination of the lifetime of charge carriers in silicon wafers, intended as a base material for the manufacture of high-speed p-n-microelectronic devices and high-performance solar cells. It is shown that the method of quasi-stationary photoconductivity is based on the following principles: illumination of the research object with a long, slowly decaying light pulse; simultaneous measurement of sample surface conductivity and incident light intensity as functions of time; determining the level of generation of electron-hole pairs in the semiconductor material from the measured value of the intensity of the incident light at each moment of time; determination of the quasi-equilibrium concentration of charge carriers, based on the measured value of the surface conductivity at each moment of time; calculation of the effective lifetime of minority charge carriers in the quasi-equilibrium approximation.
| Mualliflar | Алиев, Р., Курбанов, А.О., Иззатиллаев, Х. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashr sanasi | 2021-08-20 |
| Jild | 23 |
| Son | 1 |
| Betlar | 24-30 |
| Til | Rus |
| DOI | 10.52304/.v23i1.219 |
DOI: 10.52304/.v23i1.219 · Maqolaning asl sahifasi
кремний, время жизни неосновных носителей заряда, фотопроводимость, сол- нечный элемент, рекомбинация., silicon, lifetime of minority charge carriers, photoconductivity, solar cell, recombination
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