On the dynamic characteristics of nonequilibrium charge carriers in silicon wafers

Алиев, Р., Курбанов, А.О., Иззатиллаев, Х.

O‘zbekiston fizika jurnali · 2021-yil

Annotatsiya

The article is devoted to the presentation and discussion of the primary results of an experimental study of the possibility of using the modern "transient photoconductance method" and "noncontact quasi-steady state photoconductivity method" for a more accurate, accelerated and nondestructive determination of the lifetime of charge carriers in silicon wafers, intended as a base material for the manufacture of high-speed p-n-microelectronic devices and high-performance solar cells. It is shown that the method of quasi-stationary photoconductivity is based on the following principles: illumination of the research object with a long, slowly decaying light pulse; simultaneous measurement of sample surface conductivity and incident light intensity as functions of time; determining the level of generation of electron-hole pairs in the semiconductor material from the measured value of the intensity of the incident light at each moment of time; determination of the quasi-equilibrium concentration of charge carriers, based on the measured value of the surface conductivity at each moment of time; calculation of the effective lifetime of minority charge carriers in the quasi-equilibrium approximation.

Maqola ma’lumotlari
MualliflarАлиев, Р., Курбанов, А.О., Иззатиллаев, Х.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2021-08-20
Jild23
Son1
Betlar24-30
TilRus
DOI10.52304/.v23i1.219

Kalit so‘zlar

кремний, время жизни неосновных носителей заряда, фотопроводимость, сол- нечный элемент, рекомбинация., silicon, lifetime of minority charge carriers, photoconductivity, solar cell, recombination

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