Features of the technology and some properties of heteroepitaxial structures Si-Ge / Si

Абдурахманов, Б.М., Ашуров, Х.Б., Кучканов, Ш.К., Максимов, С.Е., Ниматов, С.Ж.

O‘zbekiston fizika jurnali · 2020-yil

Annotatsiya

The appearance of thermoelectric power on heated p-n heterostructures containing on the surface of silicon substrates the deposited films from a Si-Ge solid solution heavily doped with titanium was experimentally observed. The appearance of the thermoelectric power, even with uniform heating of the samples, had been explained by the thermal-voltaic effect, that is the generation of charge carriers due to the absorption of subband photons with the participation of deep energy levels caused by both structural defects of Si-Ge films and an impurity of titanium. It is shown that when the p-n structures are heated to 800 K, the emf is several mV, and the additional local illumination of the surface leads to an increase in the current by a factor of 15.

Maqola ma’lumotlari
MualliflarАбдурахманов, Б.М., Ашуров, Х.Б., Кучканов, Ш.К., Максимов, С.Е., Ниматов, С.Ж.
JurnalO‘zbekiston fizika jurnali
Nashr sanasi2020-12-17
Jild22
Son6
Betlar362-368
TilRus
DOI10.52304/.v22i6.208

Kalit so‘zlar

генерация носителей заряда, тепловольтаический эффект, глубокие энергетические уровни, структурные дефекты, кремний-германиевые эпитаксиальные пленки, легирование примесью титана, термо-эдс., generation of charge carriers, thermal-voltaic effect, deep energy levels, structural defects, silicon-germanium epitaxial films, titanium impurity doping, thermoelectric power.

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