The appearance of thermoelectric power on heated p-n heterostructures containing on the surface of silicon substrates the deposited films from a Si-Ge solid solution heavily doped with titanium was experimentally observed. The appearance of the thermoelectric power, even with uniform heating of the samples, had been explained by the thermal-voltaic effect, that is the generation of charge carriers due to the absorption of subband photons with the participation of deep energy levels caused by both structural defects of Si-Ge films and an impurity of titanium. It is shown that when the p-n structures are heated to 800 K, the emf is several mV, and the additional local illumination of the surface leads to an increase in the current by a factor of 15.
| Mualliflar | Абдурахманов, Б.М., Ашуров, Х.Б., Кучканов, Ш.К., Максимов, С.Е., Ниматов, С.Ж. |
|---|---|
| Jurnal | O‘zbekiston fizika jurnali |
| Nashriyot | Ўзбекистон Республикаси Фанлар академияси |
| ISSN | 1025-8817, 2181-077X |
| Nashr sanasi | 2020-12-17 |
| Jild | 22 |
| Son | 6 |
| Betlar | 362-368 |
| Til | Ingliz |
| Ilmiy soha | Fizika-matematika |
| DOI | 10.52304/.v22i6.208 |
| Indeksga qo‘shilgan | 2026-08-26 |
DOI: 10.52304/.v22i6.208 · Maqolaning asl sahifasi
генерация носителей заряда, тепловольтаический эффект, глубокие энергетические уровни, структурные дефекты, кремний-германиевые эпитаксиальные пленки, легирование примесью титана, термо-эдс., generation of charge carriers, thermal-voltaic effect, deep energy levels, structural defects, silicon-germanium epitaxial films, titanium impurity doping, thermoelectric power.
| APA | Абдурахманов, Б.М., Ашуров, Х.Б., Кучканов, Ш.К., Максимов, С.Е., & Ниматов, С.Ж. (2020). Features of the technology and some properties of heteroepitaxial structures Si-Ge / Si. O‘zbekiston fizika jurnali, 22(6), 362-368. https://doi.org/10.52304/.v22i6.208 |
|---|---|
| GOST (OAK) | Абдурахманов, Б.М. va b. Features of the technology and some properties of heteroepitaxial structures Si-Ge / Si // O‘zbekiston fizika jurnali. – 2020. – T. 22, № 6. – P. 362-368. – DOI: 10.52304/.v22i6.208. |
| MLA | Абдурахманов, Б.М., Ашуров, Х.Б., Кучканов, Ш.К., Максимов, С.Е., and Ниматов, С.Ж. “Features of the technology and some properties of heteroepitaxial structures Si-Ge / Si.” O‘zbekiston fizika jurnali, 22(6), 362-368, 2020. https://doi.org/10.52304/.v22i6.208 |
| Chicago | Абдурахманов, Б.М., Ашуров, Х.Б., Кучканов, Ш.К., Максимов, С.Е., and Ниматов, С.Ж. “Features of the technology and some properties of heteroepitaxial structures Si-Ge / Si.” O‘zbekiston fizika jurnali, 22(6), 362-368 (2020). https://doi.org/10.52304/.v22i6.208 |
| Harvard | Абдурахманов, Б.М., Ашуров, Х.Б., Кучканов, Ш.К., Максимов, С.Е., and Ниматов, С.Ж (2020) ‘Features of the technology and some properties of heteroepitaxial structures Si-Ge / Si’, O‘zbekiston fizika jurnali, 22(6), 362-368. https://doi.org/10.52304/.v22i6.208 |
| BibTeX | @article{article2020,
title = {Features of the technology and some properties of heteroepitaxial structures Si-Ge / Si},
author = {Абдурахманов, Б.М. and Ашуров, Х.Б. and Кучканов, Ш.К. and Максимов, С.Е. and Ниматов, С.Ж.},
journal = {O‘zbekiston fizika jurnali},
year = {2020},
volume = {22},
number = {6},
pages = {362-368},
doi = {10.52304/.v22i6.208},
url = {https://doi.org/10.52304/.v22i6.208}
} |
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